# Luminescence properties of dislocations in α-Ga<sub>2</sub>O<sub>3</sub>

https://mdr.nims.go.jp/datasets/2835669e-8564-4834-8646-84c1a0de1291

## File

- [Maruzane_2025_J._Phys._D__Appl._Phys._58_03LT02.pdf](https://mdr.nims.go.jp/filesets/15293238-ff77-4a59-93dd-97106274fba0/download) ([Detail](https://mdr.nims.go.jp/filesets/15293238-ff77-4a59-93dd-97106274fba0.md))

## Id

2835669e-8564-4834-8646-84c1a0de1291

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-11-12T02:48:17.873833Z

## Updated at

2024-11-12T23:31:40.398628Z

## Published at

2024-11-12T23:31:40.465138Z

## Doi



## First published url

https://doi.org/10.1088/1361-6463/ad8894

## Date published

2025-01-20

## Recorded date published

2025-1-20

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Luminescence properties of dislocations in α-Ga<sub>2</sub>O<sub>3</sub>
  title_type: original
  lang: en

## Description

- description: "Dislocations in epitaxial lateral overgrown α-Ga2O3 are investigated
    using hyperspectral\r\ncathodoluminescence spectroscopy. The dislocations are
    associated with a reduction of\r\nself-trapped hole-related luminescence (ca.
    3.6 eV line) which can be ascribed to their actions as non-radiative recombination
    sites for free electrons, to a reduction in free electron density due to Fermi
    level pinning or to electron trapping at donor states. An increase in the intensity
    of the ca. 2.8 eV and 3.2 eV lines are observed at the dislocations, suggesting
    an increase in donor–acceptor pair transitions and providing strong evidence that
    point defects segregate at dislocations."
  description_type: abstract
  lang: und

## Creator

- name: Mugove Maruzane
  role: author
  orcid: https://orcid.org/0009-0004-9207-0424
- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
- name: Olha Makydonska
  role: author
  orcid: https://orcid.org/0009-0008-5562-2137
- name: Paul R Edwards
  role: author
  orcid: https://orcid.org/0000-0001-7671-7698
- name: Robert W Martin
  role: author
  orcid: https://orcid.org/0000-0002-6119-764X
- name: Fabien C-P Massabuau
  role: author
  orcid: https://orcid.org/0000-0003-1008-1652

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: dislocation
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: 'Journal of Physics D: Applied Physics'
  issn: '00223727'
  volume: '58'
  issue: '3'

## Conference



## Related item



## Funding

- identifier: EP/K011952/1
  funder_name: Engineering and Physical Sciences Research Council

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 15293238-ff77-4a59-93dd-97106274fba0
  filename: Maruzane_2025_J._Phys._D__Appl._Phys._58_03LT02.pdf
  content_type: application/pdf
  size: 1285438
  md5: 8c7e509cbb4bf91e6218442c11ce8a20

## Thumbnail

fileset_id: 15293238-ff77-4a59-93dd-97106274fba0
filename: Maruzane_2025_J._Phys._D__Appl._Phys._58_03LT02.pdf