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説明:

Planar graphene-NbSe2 Josephson junctions can support supercurrents at high in-plane magnetic fields (B∥) due to the robust superconductivity in thin NbSe2, protected from both orbital and spin- driven decay by a combination of atomic thickness and Ising spin orbit coupling. We fabricate and characterize a clean, flat graphene-NbSe2 junction encapsulated in hBN. The junction is ballistic, exhibiting Fabry-Perot oscillations of the critical current, and supports very high critical current densities. The junction is remarkably robust to both in-plane and out-of-plane magnetic fields, and exhibits a clear ballistic Josephson effect up to the maximally available in-plane field of 8T. We model the suppression of the critical current using a tight-binding model, accounting for the large overlap area between the NbSe2 and graphene. We find that the suppression is governed by both the Zeeman splitting of Andreev bound states and by the flux threading the van-der-Waals gap that separates graphene from the NbSe2 leads.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: graphene-NbSe2
, Josephson junction
, ballistic transport


刊行年月日: 2025-10-01

出版者: IOP Publishing

掲載誌:

• 2D Materials (ISSN: 20531583) vol. 12 issue. 4 041004

研究助成金:

• CREST(JPMJCR15F3), JST
• JSPS KAKENHI JP20H00354
• Elemental Strategy Initiative, Japan JPMXP0112101001
• Israel Science Foundation 164/23

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1088/2053-1583/ae07fa

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更新時刻: 2026-02-16 16:30:46 +0900

MDRでの公開時刻: 2026-02-16 13:57:29 +0900