# Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

https://mdr.nims.go.jp/datasets/24a3f0a7-15f8-41f4-aa94-9655bb0d612b

## File

- [APL24-AR-02539Authors.pdf](https://mdr.nims.go.jp/filesets/31ac47c3-722f-414f-84b8-ec1b4b61470a/download) ([Detail](https://mdr.nims.go.jp/filesets/31ac47c3-722f-414f-84b8-ec1b4b61470a.md))

## Id

24a3f0a7-15f8-41f4-aa94-9655bb0d612b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-07-12T06:18:38.667335Z

## Updated at

2024-07-12T23:30:10.191443Z

## Published at

2024-07-12T23:30:10.660099Z

## Doi

https://doi.org/10.48505/nims.4590

## First published url

https://doi.org/10.1063/5.0208784

## Date published

2024-06-24

## Recorded date published

2024-6-24

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN
    double heterostructures
  title_type: original
  lang: en

## Description

- description: Magnetoresistance (MR) of two-dimensional hole gas (2DHG) samples fabricated
    from GaN/AlxGa1-xN/GaN (x =0.2–0.25) double hetero- structures has been investigated
    to reveal subband electronic parameters and low field spin splitting properties.
    In sample with high sheet hole density (Ps<1.3 x10^13/cm2), 2DHG occupies two
    subbands, while in samples with low Ps ( <0.3x101^3/cm2), only one subband is
    occupied. In both samples, the low-field spin–orbit coupling constant a of 2DHG
    was obtained independently from the weak anti-localization data and the fast Fourier
    transform analysis of MR oscillations. The results yield a constant a ~0.53–6.1x10^-12
    eVm and a spin splitting deltaE=2akf~0.6–6.0 meV. These results strongly depend
    on the hole mass value, but appear to be of the same order as the results for
    2D electron gas in similar material systems and structures.
  description_type: abstract
  lang: und

## Creator

- name: S. Yamada
  role: author
  orcid: https://orcid.org/0009-0004-5821-1078
- name: A. Fujimoto
  role: author
- name: S. Yagi
  role: author
  orcid: https://orcid.org/0000-0003-4490-6683
- name: H. Narui
  role: author
  orcid: https://orcid.org/0000-0003-0803-5550
- name: E. Yamaguchi
  role: author
- name: Y. Imanaka
  role: author
  orcid: https://orcid.org/0000-0003-2804-4438

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: GaN
  schema: not_defined
- subject: Double Heterostructures
  schema: not_defined
- subject: Hole gas
  schema: not_defined
- subject: Magnetoresistance
  schema: not_defined
- subject: Spin-Orbit coupling
  schema: not_defined

## Rights

- description: This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Yamada, S., Fujimoto, A., Yagi, S., Narui, H., Yamaguchi, E., & Imanaka, Y.
    (2024). Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN
    double heterostructures. Applied Physics Letters, 124(26) and may be found at
    https://doi.org/10.1063/5.0208784
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '124'
  issue: '26'

## Conference



## Related item



## Funding

- identifier: 20K04631
  funder_name: 日本学術振興会
  description: InGaAs量子井戸2層電子系による多値論理素子開発の研究

## Instrument



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## Specimen



## Chemical composition



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## Fileset

- id: 31ac47c3-722f-414f-84b8-ec1b4b61470a
  filename: APL24-AR-02539Authors.pdf
  content_type: application/pdf
  size: 810770
  md5: 4f4ea63ff6018e42fabf9ce603283afd

## Thumbnail

fileset_id: 31ac47c3-722f-414f-84b8-ec1b4b61470a
filename: APL24-AR-02539Authors.pdf