# Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device applications

https://mdr.nims.go.jp/datasets/249d0a80-85a3-4c34-8527-427149128fd6

## File

- [Takane_2024_Appl._Phys._Express_17_011008(1).pdf](https://mdr.nims.go.jp/filesets/ed4cee6f-e813-4bef-beed-312cf7aac1c4/download) ([Detail](https://mdr.nims.go.jp/filesets/ed4cee6f-e813-4bef-beed-312cf7aac1c4.md))

## Id

249d0a80-85a3-4c34-8527-427149128fd6

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-04T03:40:15.513383Z

## Updated at

2024-02-01T00:41:54.194976Z

## Published at

2024-01-30T03:30:23.615916Z

## Doi



## First published url

https://doi.org/10.35848/1882-0786/ad15f3

## Date published

2024-01-01

## Recorded date published

2024-1-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for
    device applications
  title_type: original
  lang: en

## Description

- description: We report the characterization and application of mist-CVD-grown rutile-structured
    GexSn1−xO2 (x = ∼0.53) films lattice-matched to isostructural TiO2(001) substrates.
    The grown surface was flat throughout the growth owing to the lattice-matching
    epitaxy. Additionally, the film was single-crystalline without misoriented domains
    and TEM-detectable threading dislocations due to the coherent heterointerface.
    Using the Ge0.49Sn0.51O2 film with a carrier density of 7.8 × 1018 cm−3 and a
    mobility of 24 cm2V−1s−1, lateral Schottky barrier diodes were fabricated with
    Pt anodes and Ti/Au cathodes. The diodes exhibited rectifying properties with
    a rectification ratio of 8.2 × 104 at ±5 V, showing the potential of GexSn1-xO2
    as a practical semiconductor.
  description_type: abstract
  lang: eng

## Creator

- name: Hitoshi Takane
  role: author
  orcid: https://orcid.org/0000-0001-8866-145X
- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
  organization: National Institute for Materials Science
- name: Takayuki Harada
  role: author
  orcid: https://orcid.org/0000-0002-8657-2258
  organization: National Institute for Materials Science
- name: Kentaro Kaneko
  role: author
  orcid: https://orcid.org/0000-0001-6626-7611
- name: Katsuhisa Tanaka
  role: author
  orcid: https://orcid.org/0000-0002-1409-2802

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: GeO2
  schema: not_defined
- subject: SnO2
  schema: not_defined
- subject: TiO2
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Express
  issn: '18820778'
  volume: '17'
  issue: '1'
  start_page: 11008
  end_page: 11008

## Conference



## Related item



## Funding

- funder_name: 日本板硝子材料工学助成会

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: ed4cee6f-e813-4bef-beed-312cf7aac1c4
  filename: Takane_2024_Appl._Phys._Express_17_011008(1).pdf
  content_type: application/pdf
  size: 792030
  md5: cb0e44ae787b7073a4e106cefdfa93ac

## Thumbnail

fileset_id: ed4cee6f-e813-4bef-beed-312cf7aac1c4
filename: Takane_2024_Appl._Phys._Express_17_011008(1).pdf