# High Schottky barrier formation in tilted-dipole PdCoO2/                                          <i>β</i>                                        -Ga2O3 (001) interfaces

https://mdr.nims.go.jp/datasets/247f9f76-5250-4fee-b7f6-22415721dc3e

## File

- [APL26-AR-02454_accepted_manuscript.pdf](https://mdr.nims.go.jp/filesets/33a5e954-2ca7-4b13-92c0-9a5952013198/download) ([Detail](https://mdr.nims.go.jp/filesets/33a5e954-2ca7-4b13-92c0-9a5952013198.md))

## Id

247f9f76-5250-4fee-b7f6-22415721dc3e

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-06-10T05:27:21.870827Z

## Updated at

2026-06-10T05:51:59.438647Z

## Published at

2026-06-10T08:29:40.824405Z

## Doi

https://doi.org/10.48505/nims.6334

## First published url

https://doi.org/10.1063/5.0332733

## Date published

2026-06-01

## Recorded date published

2026-6-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: High Schottky barrier formation in tilted-dipole PdCoO2/                    <b>                      <i>β</i>                    </b>                    -Ga2O3
    (001) interfaces
  title_type: original
  lang: en

## Description

- description: "We report the growth and Schottky junction characteristics of metallic
    delafossite PdCoO2/β-Ga2O3 (001) heterostructures. The PdCoO2 thin films predominantly
    grow with the epitaxial relationship of PdCoO2 (006)//β-Ga2O3 (202), forming a
    high-quality oxide–oxide interface. Despite a 24° tilt between the PdCoO2 surface
    polarization axis and the β-Ga2O3 (001) surface normal, a large Schottky barrier
    height of \r\n > 1.7 eV was achieved. This value is comparable with that reported
    for PdCoO2/β-Ga2O3 (⁠ \r\n \r\n01) where the PdCoO2 surface polarization axis
    is perpendicular to the interface. The PdCoO2/β-Ga2O3 (001) Schottky junctions
    showed a large on–off ratio of ∼108 at 573 K. These results demonstrate the feasibility
    of delafossite-type electrodes for β-Ga2O3 (001) heterostructures with high-quality
    homoepitaxial β-Ga2O3 layers."
  description_type: abstract
  lang: und

## Creator

- name: Takayuki Harada
  role: author
  orcid: https://orcid.org/0000-0002-8657-2258
- name: Takuro Nagai
  role: author
  orcid: https://orcid.org/0000-0001-5239-3334
- name: Kohei Sasaki
  role: author
  orcid: https://orcid.org/0000-0002-8923-7703

## Contact agent



## Publisher

organization: AIP Publishing
ror: https://ror.org/

## Managing organization



## Keyword

- subject: Thin film
  schema: not_defined
- subject: Ga2O3
  schema: not_defined
- subject: Delafossite
  schema: not_defined
- subject: Power devices
  schema: not_defined
- subject: Schottky
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Takayuki Harada, Takuro Nagai, Kohei Sasaki; High Schottky barrier formation
    in tilted-dipole PdCoO2/β-Ga2O3 (001) interfaces. Appl. Phys. Lett. 1 June 2026;
    128 (22): 222101 and may be found at https://doi.org/10.1063/5.0332733.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '128'
  issue: '22'
  article_number: '222101'

## Conference



## Related item



## Funding

- identifier: JPMXS0320200047
  funder_name: Japan Society for the Promotion of Science
- identifier: 24K01353
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMJPR20AD
  funder_name: Japan Science and Technology Agency

## Instrument



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## Specimen



## Chemical composition



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## Fileset

- id: 33a5e954-2ca7-4b13-92c0-9a5952013198
  filename: APL26-AR-02454_accepted_manuscript.pdf
  content_type: application/pdf
  size: 874636
  md5: 1ceb6e342ef602230fffe85f5e03da18

## Thumbnail

fileset_id: 33a5e954-2ca7-4b13-92c0-9a5952013198
filename: APL26-AR-02454_accepted_manuscript.pdf