# Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface

https://mdr.nims.go.jp/datasets/22b08252-5687-4f2e-b3de-c6ab08231b54

## File

- [095304_1_5.0224068.pdf](https://mdr.nims.go.jp/filesets/a1c15de1-d934-4634-963f-5f0d5835ef94/download) ([Detail](https://mdr.nims.go.jp/filesets/a1c15de1-d934-4634-963f-5f0d5835ef94.md))

## Id

22b08252-5687-4f2e-b3de-c6ab08231b54

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-03-18T08:16:22.285365Z

## Updated at

2025-03-26T08:26:31.438604Z

## Published at

2025-03-26T08:26:31.813744Z

## Doi



## First published url

https://doi.org/10.1063/5.0224068

## Date published

2025-03-07

## Recorded date published

2025-3-7

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Effects of nitrosyl fluoride based gas treatment on fluorination and redox
    reaction at GaN surface and Pt/GaN interface
  title_type: original
  lang: en

## Description

- description: The effects of nitrosyl fluoride (FNO) gas treatment on the surface
    of GaN(0001) and its interface with sputtered Pt were investigated by hard x-ray
    photoelectron spectroscopy (HAXPES). Annealing GaN and Pt/GaN samples in an FNO
    gas atmosphere resulted in the appearance of prominent F 1s peaks in the HAXPES
    spectra, indicating the efficient formation of Ga–Fx bonding states not only in
    bare-GaN but also in Pt/GaN, even when the FNO gas treatment was performed after
    Pt deposition. In addition, the chemical shifts of the Ga 2p3/2 and N 1s peaks
    corresponded to a Fermi level shift toward the valence band. The FNO gas treatment
    induced greater oxidation of the GaN surface than the Pt/GaN interface. By contrast,
    at the Pt/GaN interface, the unintentionally formed oxide GaOx was reduced, resulting
    in an improvement of the electrical properties. The results of this study suggest
    that FNO gas treatment is an effective post-processing method for the fluorination
    of GaN-based systems after metal deposition.
  description_type: abstract
  lang: und

## Creator

- name: Takahiro Nagata
  role: author
  orcid: https://orcid.org/0000-0002-8591-2943
- name: Asahiko Matsuda
  role: author
  orcid: https://orcid.org/0000-0001-5989-027X
- name: Takashi Teramoto
  role: author
  orcid: https://orcid.org/0000-0002-9368-1284
- name: Dominic Gerlach
  role: author
  orcid: https://orcid.org/0000-0003-1859-0750
- name: Peng Shen
  role: author
  orcid: https://orcid.org/0000-0002-1971-5490
- name: Shigenori Ueda
  role: author
  orcid: https://orcid.org/0000-0001-9425-0614
- name: Takako Kimura
  role: author
  orcid: https://orcid.org/0009-0007-0109-4482
- name: Christian Dussarrat
  role: author
  orcid: https://orcid.org/0009-0000-1063-6473
- name: Toyohiro Chikyow
  role: author
  orcid: https://orcid.org/0000-0003-3860-4806

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: gallium nitride
  schema: not_defined
- subject: GaN
  schema: not_defined
- subject: nitrosyl fluoride
  schema: not_defined
- subject: FNO
  schema: not_defined
- subject: HAXPES
  schema: not_defined
- subject: defect passivation
  schema: not_defined
- subject: fluorination
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Journal of Applied Physics
  issn: '00218979'
  volume: '137'
  issue: '9'

## Conference



## Related item



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## Instrument



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Fileset

- id: a1c15de1-d934-4634-963f-5f0d5835ef94
  filename: '095304_1_5.0224068.pdf'
  content_type: application/pdf
  size: 2633151
  md5: 607ca30256513b9b0700be4d1850f575

## Thumbnail

fileset_id: a1c15de1-d934-4634-963f-5f0d5835ef94
filename: '095304_1_5.0224068.pdf'