# Temperature dependence of betavoltaic cell performance of diamond pn junction diode

https://mdr.nims.go.jp/datasets/22ac5e37-1e65-49c9-9c43-644b234c024f

## File

- [Temperature dependence of betavoltaic cell performance of diamond pn junction diode_draft.pdf](https://mdr.nims.go.jp/filesets/6f4c9960-53c8-423e-8e0e-c911a22fd476/download) ([Detail](https://mdr.nims.go.jp/filesets/6f4c9960-53c8-423e-8e0e-c911a22fd476.md))

## Id

22ac5e37-1e65-49c9-9c43-644b234c024f

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-11-21T04:01:49.253986Z

## Updated at

2025-11-17T03:30:15.407185Z

## Published at

2025-11-15T23:22:44.831697Z

## Doi

https://doi.org/10.48505/nims.4404

## First published url

https://ieeexplore.ieee.org/abstract/document/10320390

## Date published

2023-11-16

## Recorded date published



## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Temperature dependence of betavoltaic cell performance of diamond pn junction
    diode
  title_type: original
  lang: en

## Description

- description: Temperature dependence of the energy conversion efficiency of diamond
    pn junction betavoltaic cells was evaluated. The diamond pn junction diode exhibits  energy
    conversion efficiencies of 18-24% at 150-300 K, which is  more than twice as high
    as those of silicon PiN diode. Above 150K, the diamond pn junction diode presents
    smaller temperature dependency on energy conversion efficiency than that of silicon
    diode, which would make diamond pn junction betavoltaic cells, a promising device
    for energy harvesting in remote sensing devices over a wide temperature range
    except in the cryogenic region.
  description_type: abstract
  lang: eng

## Creator

- name: Takehiro SHIMAOKA
  role: author
  orcid: https://orcid.org/0000-0002-4298-404X
  organization: AIST
- name: Hitoshi Umezawa
  role: author
  orcid: https://orcid.org/0000-0002-0838-4497
  organization: AIST
- name: Gwénolé JACOPIN
  role: author
  orcid: https://orcid.org/0000-0003-0049-7195
  organization: CNRS, Institut Néel
- name: Satoshi KOIZUMI
  role: author
  orcid: https://orcid.org/0000-0003-4961-5658
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group
  ror: https://ror.org/026v1ze26
- name: Takeshi Fujiwara
  role: author
  orcid: https://orcid.org/0000-0002-5754-8443
  organization: AIST
- name: JULIEN PERNOT
  role: author
  orcid: https://orcid.org/0000-0002-6967-237X
  organization: CNRS, Institut Néel

## Contact agent



## Publisher

organization: IEEE

## Managing organization



## Keyword

- subject: ultrawide bandgap
  schema: not_defined
- subject: energy conversion
  schema: not_defined
- subject: nuclear battery
  schema: not_defined
- subject: betavoltaic cell
  schema: not_defined
- subject: remote sensing
  schema: not_defined

## Rights

- description: "© 2023 IEEE.  Personal use of this material is permitted.  Permission
    from IEEE must be obtained for all other uses, in any current or future media,
    including reprinting/republishing this material for advertising or promotional
    purposes, creating new collective works, for resale or redistribution to servers
    or lists, or reuse of any copyrighted component of this work in other works."
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2023-11-16
end_date: 2025-11-16

## Journal

- title: IEEE ELECTRON DEVICE LETTERS
  volume: '45'
  issue: '1'
  start_page: 96
  end_page: 99

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 6f4c9960-53c8-423e-8e0e-c911a22fd476
  filename: Temperature dependence of betavoltaic cell performance of diamond pn junction
    diode_draft.pdf
  content_type: application/pdf
  size: 548931
  md5: 19a25ff8ea40ad9903aa155b056d8b58

## Thumbnail

fileset_id: 6f4c9960-53c8-423e-8e0e-c911a22fd476
filename: Temperature dependence of betavoltaic cell performance of diamond pn junction
  diode_draft.pdf