# Ce-Doped SnO<sub>2</sub> Electron Transport Layer for Minimizing Open Circuit Voltage Loss in Lead Perovskite Solar Cells

https://mdr.nims.go.jp/datasets/22281de0-83b1-4505-9568-744ca058244b

## File

- [Ce-Doped SnO2 Electron Transport Layer by Shamim.docx](https://mdr.nims.go.jp/filesets/df7859ab-bfe3-4325-8a8d-b3f0b63ef26a/download) ([Detail](https://mdr.nims.go.jp/filesets/df7859ab-bfe3-4325-8a8d-b3f0b63ef26a.md))

## Id

22281de0-83b1-4505-9568-744ca058244b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-01-09T08:31:05.694632Z

## Updated at

2025-06-11T23:30:22.826683Z

## Published at

2025-06-11T23:20:28.233096Z

## Doi

https://doi.org/10.48505/nims.5259

## First published url

https://doi.org/10.1021/acsami.4c05180

## Date published

2024-06-26

## Recorded date published

2024-6-26

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Ce-Doped SnO<sub>2</sub> Electron Transport Layer for Minimizing Open Circuit
    Voltage Loss in Lead Perovskite Solar Cells
  title_type: original
  lang: en

## Description

- description: In the planar heterostructure of perovskite based solar cells (PSCs),
    tin oxide (SnO2) is a material that is often used as the electron transport layer
    (ETL). Because SnO2 ETL exhibits favorable optical and electrical properties in
    the PSC structures. Nevertheless, the open circuit voltage (VOC) depletion occurs
    in PSCs due to the defects arising from the high oxygen vacancy on the SnO2 surface
    and the deeper conduction band (CB) energy level of SnO2. In this research, cerium
    (Ce) dopant was introduced in SnO2 (Ce-SnO2) to suppress the VOC loss of the PSCs.
    The CB minimum of SnO2 was shifted closer to that of the perovskite after introducing
    the Ce doping. Besides, the Ce doping effectively passivated the surface defects
    on the SnO2 as well as improved the electron transport velocity by the Ce-SnO2.
    These results enabled the power conversion efficiency (PCE) to increase from 21.1%
    (SnO2) to 23.0% (Ce-SnO2) of the PSCs (0.09 cm2 active area) with around 100 mV
    improved VOC and reduced hysteresis. Also, the Ce-SnO2 ETL based large area (1.0
    cm2) PSCs delivered the highest PCE of 22.9%.  Furthermore, VOC of 1.19 V with
    PCE of 23.3% was demonstrated by Ce-SnO2 ETL based PSCs (0.09 cm2 active area)
    that were treated with 2-phenethylamine hydroiodide on the perovskite top surface.
    Notably, the unencapsulated Ce-SnO2 ETL based PSC was able to maintain above 90%
    of its initial PCE for around 2000 h which was stored at room temperature condition
    (23~25°C) with relative humidity of 40~50%.
  description_type: abstract
  lang: en

## Creator

- name: Shamim Ahmmed
  role: author
- name: Yulu He
  role: author
- name: Md. Emrul Kayesh
  role: author
  organization: National Institute for Materials Science
- name: Md. Abdul Karim
  role: author
  orcid: https://orcid.org/0000-0002-9042-811X
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Kiyoto Matsuishi
  role: author
- name: Ashraful Islam
  role: author
  orcid: https://orcid.org/0000-0002-1633-1432
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: Electron Transport Layer
  schema: not_defined
- subject: Perovskite Solar Cells
  schema: not_defined
- subject: Ce-Doped SnO2
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Work
    that appeared in final form in Ce-Doped SnO2 Electron Transport Layer for Minimizing
    Open Circuit Voltage Loss in Lead Perovskite Solar Cells, copyright © 2024 American
    Chemical Society after peer review and technical editing by the publisher. To
    access the final edited and published work see https://doi.org/10.1021/acsami.4c05180
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-06-12
end_date: 2025-06-12

## Journal

- title: ACS Applied Materials & Interfaces
  issn: '19448252'
  volume: '16'
  issue: '25'
  start_page: 32282
  end_page: 32290

## Conference



## Related item



## Funding

- identifier: JPMXP1223BA0024
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: 22H02190
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMJAN23B2
  funder_name: Advanced Low Carbon Technology Research and Development Program

## Instrument



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## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



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## Computational method



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## Fileset

- id: df7859ab-bfe3-4325-8a8d-b3f0b63ef26a
  filename: Ce-Doped SnO2 Electron Transport Layer by Shamim.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 34939924
  md5: bd20fcb41c2d4552e007bfdf5f965317

## Thumbnail

fileset_id: df7859ab-bfe3-4325-8a8d-b3f0b63ef26a
filename: Ce-Doped SnO2 Electron Transport Layer by Shamim.docx