# Transport Study of Charge-Carrier Scattering in Monolayer <math display="inline">  <mrow>    <msub>      <mrow>        <mi>WSe</mi>      </mrow>      <mrow>        <mn>2</mn>      </mrow>    </msub>  </mrow></math>

https://mdr.nims.go.jp/datasets/21a49239-0cc2-485d-a79c-a40677517c8c

## File

- [2024A00180G_High_mobility_charge_transport_in_monolayer_WSe2[60].pdf](https://mdr.nims.go.jp/filesets/caf7d450-dba1-436d-b2e3-f41322f188f0/download) ([Detail](https://mdr.nims.go.jp/filesets/caf7d450-dba1-436d-b2e3-f41322f188f0.md))

## Id

21a49239-0cc2-485d-a79c-a40677517c8c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-08-27T07:06:37.431786Z

## Updated at

2025-08-27T23:30:32.819035Z

## Published at

2025-08-27T23:18:03.386040Z

## Doi



## First published url

https://doi.org/10.1103/physrevlett.132.056303

## Date published

2024-01-30

## Recorded date published

2024-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Transport Study of Charge-Carrier Scattering in Monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"
    display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>WSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
  title_type: original
  lang: en

## Description

- description: Employing flux-grown single crystal WSe<sub>2</sub>, we report charge
    carrier scattering behaviors measured in h-BN encapsulated monolayer field effect
    transistors. We perform quantum transport measurements across various hole densities
    and temperatures and observe a non-monotonic change of transport mobility μ as
    a function of hole density in the degenerately doped sample. This unusual behavior
    can be explained by energy dependent scattering amplitude of strong defects calculated
    using the T-matrix approximation. Utilizing long mean-free path (>500 nm), we
    demonstrate the high quality of our electronic devices by showing quantized conductance
    steps from an electrostatically defined quantum point contact. Our results show
    the potential for creating ultra-high quality quantum optoelectronic devices based
    on atomically thin semiconductors.
  description_type: abstract
  lang: en

## Creator

- name: Andrew Y. Joe
  role: author
- name: Kateryna Pistunova
  role: author
- name: Kristen Kaasbjerg
  role: author
- name: Ke Wang
  role: author
- name: Bumho Kim
  role: author
- name: Daniel A. Rhodes
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: James Hone
  role: author
- name: Tony Low
  role: author
- name: Luis A. Jauregui
  role: author
- name: Philip Kim
  role: author

## Contact agent



## Publisher

organization: American Physical Society (APS)

## Managing organization



## Keyword

- subject: WSe2 single crystal
  schema: not_defined
- subject: Quantum transport
  schema: not_defined
- subject: Quantum point contact
  schema: not_defined

## Rights

- description: "© 2024 American Physical Society"
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Physical Review Letters
  issn: '10797114'
  volume: '132'
  issue: '5'
  article_number: '056303'

## Conference



## Related item



## Funding

- funder_name: Army Research Office
- identifier: JPMJCR15F3
  funder_name: Core Research for Evolutional Science and Technology
- funder_name: Japan Science and Technology Agency
- funder_name: Multidisciplinary University Research Initiative
- funder_name: Samsung
- funder_name: Horizon 2020 Framework Programme
- identifier: '713683'
  funder_name: HORIZON EUROPE Marie Sklodowska-Curie Actions
- identifier: JPMXP0112101001
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: 312 JP20H00354
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: caf7d450-dba1-436d-b2e3-f41322f188f0
  filename: 2024A00180G_High_mobility_charge_transport_in_monolayer_WSe2[60].pdf
  content_type: application/pdf
  size: 6612669
  md5: '08920ed6e983d9c80ec1ab6547f061db'

## Thumbnail

fileset_id: caf7d450-dba1-436d-b2e3-f41322f188f0
filename: 2024A00180G_High_mobility_charge_transport_in_monolayer_WSe2[60].pdf