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Emergent functionalities created by applying mechanical stress to flexible devices using SnO2 microrods and Ga2O3/SnO2-core/shell microribbons are reviewed. Dynamic lattice defect engineering through application of mechanical stress and a voltage to the SnO2 microrod device leads to a reversible semiconductor-insulator transition through lattice defect creation and healing, providing an effective and simple solution to the persistent photoconductivity (PPC) problem that has long plagued UV semiconductor photosensors. Here, lattice defects are created near slip planes in a rutile-structured microrod by applying mechanical stress and are healed by Joule heating by applying a voltage to the microrod. Nanoscale amorphous structuring makes the Ga2O3/SnO2-core/shell microribbon with a large SnO2 surface area more sensitive to changes in temperature, while mechanical bending of the wet device improves its sensitivity to adsorbed water molecules. These results illustrate the potential for developing flexible devices with new functionalities by enhancing the intrinsic properties of materials through miniaturization, mechanical stress, and hybridization.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Rutile structure, SnO2, flexible device, mechanical stress, defect engineering, lattice defect, humidity sensing

Date published: 2024-03-01

Publisher: IOP Publishing

Journal:

• Nano Express (ISSN: 2632959X) vol. 5 issue. 1 012004

Funding:

• JSPS KAKENHI JP21K04821

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5009

First published URL: https://doi.org/10.1088/2632-959x/ad2c9b

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Updated at: 2024-11-21 16:30:28 +0900

Published on MDR: 2024-11-21 16:30:28 +0900