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説明:

We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111). The Co-based junction is shown to have a TMR ratio over 2000%, which is one order higher than that of the Ni-based one. The high TMR ratio is attributed to the interfacial resonance effect: the interfacial d–p antibonding states are formed close to the Fermi level in the majority-spin channel and these states in both interfaces resonate with each other. This differs essentially from the conventional coherent tunneling mechanism of high TMR ratios in Fe(Co)/MgO/Fe(Co)(001).

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Tunnel magnetoresistance, Magnetic tunnel junction, Spintronics

刊行年月日: 2020-04-06

出版者: American Physical Society (APS)

掲載誌:

• Physical Review B (ISSN: 1550235X) vol. 101 issue. 14 144404

研究助成金:

• Japan Society for the Promotion of Science 16H06332

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1103/physrevb.101.144404

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更新時刻: 2024-04-11 16:30:31 +0900

MDRでの公開時刻: 2024-04-11 16:30:31 +0900