Download file (1.7MB)
Download as zip (1.39MB)

コレクション

引用

説明:

Half-Heusler compounds are promising high-temperature thermoelectric materials due to their high figure of merit and excellent mechanical properties. The capability of the Heusler structure to accommodate a large variety of different elements allows for a vast phase space of substitutions and compositions. The quaternary half-Heuslers (also known as “double half-Heuslers”) with X(Y0.5Y′0.5)Z stoichiometry have sparked particular interest as a route to lower the lattice thermal conductivity and enhance thermoelectric performance. Here, we unveil the pivotal role of intrinsic defects, namely Sb vacancies, in nominally stoichiometric X(Ni0.5Fe0.5)Sb quaternary half-Heuslers, where X = Ti, Zr, Hf. Sb vacancies naturally occur during synthesis and can switch the conduction behavior from intrinsic n-type to p-type. To control the formation of Sb vacancies, we developed a sophisticated synthesis method, which we argue will be crucial for rational design of n and p-type quaternary half-Heusler thermoelectrics.

権利情報:

• cc-by-nc-3.0
  

キーワード: thermoelectric

刊行年月日: 2025-04-14

出版者: Royal Society of Chemistry (RSC)

掲載誌:

• Journal of Materials Chemistry A (ISSN: 20507488) vol. 13 issue. 20 p. 15268-15277

研究助成金:

• JST-Mirai Program JPMJMI19A1
• Support for Pioneering Research Initiated by the Next Generation JPMJSP2124

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1039/d5ta01437a

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-11-11 12:30:11 +0900

MDRでの公開時刻: 2025-11-11 12:22:31 +0900