# Diamond Metal-Oxide-Semiconductor Field-effect Transistors on a Large-area Wafer

https://mdr.nims.go.jp/datasets/1f29ae72-efe9-4c27-96a6-7ae50ac8a1f7

## File

- [liu abstract2.pdf](https://mdr.nims.go.jp/filesets/9aaa5353-4f44-42f2-9bd5-f97b64e59dcd/download) ([Detail](https://mdr.nims.go.jp/filesets/9aaa5353-4f44-42f2-9bd5-f97b64e59dcd.md))

## Id

1f29ae72-efe9-4c27-96a6-7ae50ac8a1f7

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-12-11T02:29:46.875787Z

## Updated at

2024-02-27T03:30:17.879753Z

## Published at

2024-02-27T03:30:17.963467Z

## Doi

https://doi.org/10.48505/nims.4411

## First published url

https://doi.org/10.1109/ICEICT57916.2023.10245613

## Date published

2023-07-21

## Recorded date published

2023-7-21

## Resource type

conference_paper

## Manuscript type

authors_original

## Collection



## Title

- title: Diamond Metal-Oxide-Semiconductor Field-effect Transistors on a Large-area
    Wafer
  title_type: original
  lang: en

## Description

- description: Diamond-based devices are suitable for high-power, low power-loss,
    high-frequency, and high-temperature applications. Most of diamond-based metal-oxide-semiconductor
    field-effect transistors (MOSFETs) are fabricated on small-area diamond wafers
    (3 × 3 mm2). In order to promote the diamond-based devices for future applications,
    it is necessary to investigate the electrical properties of them on the large-area
    wafers. Here, we fabricate 720 hydrogen-terminated diamond MOSFETs on a large-area
    wafer (8 × 8 mm2). Electrical properties of them are investigated and discussed.
  description_type: abstract
  lang: eng

## Creator

- name: Jiangwei Liu
  role: author
  orcid: https://orcid.org/0000-0003-2580-7401
  organization: National Institute for Materials Science
- name: Hirotaka Ohsato
  role: author
  organization: National Institute for Materials Science
- name: Bo Da
  role: author
  orcid: https://orcid.org/0000-0002-0785-8662
  organization: National Institute for Materials Science
- name: Yasuo Koide
  role: author
  orcid: https://orcid.org/0000-0001-8321-9822
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: IEEE

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## Keyword

- subject: diamond
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

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## Data origin

- data_origin_type: other

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## Journal



## Conference

name: 2023 IEEE 6th International Conference on Electronic Information and Communication
  Technology (ICEICT)
start_date: 2023-07-21
end_date: 2023-07-24
identifier: https://ieeexplore.ieee.org/xpl/conhome/10244769/proceeding

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## Specimen



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## Fileset

- id: 9aaa5353-4f44-42f2-9bd5-f97b64e59dcd
  filename: liu abstract2.pdf
  content_type: application/pdf
  size: 491104
  md5: 16f2f6f5bc62f77c4a06e747340ef097

## Thumbnail

fileset_id: 9aaa5353-4f44-42f2-9bd5-f97b64e59dcd
filename: liu abstract2.pdf