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説明:

We investigate the interplay between vertical tunneling and lateral transport phenomena in electrically contacted van der Waals heterostructures made from monolayer MoS2, hBN, and graphene. We compare data taken by low-temperature scanning tunneling spectroscopy to results from room-temperature conductive atomic force spectroscopy on monolayer MoS2 with sulfur vacancies and with varying hBN layers. We show that for thick hBN barrier layers, where tunneling currents into the conductive substrate are suppressed, a side-contact still enables addressing the defect states in the STM via the lateral current flow. Few-layer hBN realizes an intermediate regime in which the competition between vertical tunneling and lateral transport needs to be considered. The latter is relevant for device structures with both a thin tunneling barrier and a side contact to the semiconducting layers. Keywords: TMDC, scanning tunneling microscopy, conductive atomic force microscopy, defects, van der Waals heterostructure.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Vertical tunneling, lateral transport, van der Waals heterostructures

刊行年月日: 2025-01-01

出版者: IOP Publishing

掲載誌:

• 2D Materials (ISSN: 20531583) vol. 12 issue. 1 p. 15023-

研究助成金:

• HORIZON EUROPE European Research Council 101076915
• Basic Energy Sciences DE-AC02-05CH11231
• Japan Society for the Promotion of Science 21H05233
• International Graduate School of Science and Engineering BrightQuanDTUM
• Bayerisches Staatsministerium für Bildung und Kultus, Wissenschaft und Kunst Quantum Valley K6
• Deutsche Forschungsgemeinschaft EXC 2089/1 — 390776260

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1088/2053-1583/ada046

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更新時刻: 2025-02-05 12:30:28 +0900

MDRでの公開時刻: 2025-02-05 12:30:28 +0900