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説明:

We demonstrate that the gate voltage Vg tunes the Schottky photocurrent ISG for the irradiation of two lights (Light A and B) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction. Light A is a 975-nm-laser that illuminates the entire Schottky gate region at 280μW/mm2. Light B is a 670-nm-laser that locally illuminates the ungated region at 0.4μW. When Vg = 0V, Light B doubles ISG for Light A. At Vg = 87mV, ISG is generated only when both Light A and B are irradiated simultaneously, like the logical operation A∩B. When Vg = 165mV, ISG is induced only for the illumination of Light A alone, like A∩B ̅.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: Low dimensional structures, Molecular beam epitaxy, Semiconducting gallium compounds

刊行年月日: 2024-12-01

出版者: AIP Publishing

掲載誌:

• AIP Advances (ISSN: 21583226) vol. 14 issue. 12

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5105

公開URL: https://doi.org/10.1063/5.0233346

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更新時刻: 2024-12-06 17:18:15 +0900

MDRでの公開時刻: 2024-12-06 17:18:15 +0900