# Homoepitaxial growth of (-102) β-Ga2O3 by halide vapor phase epitaxy

https://mdr.nims.go.jp/datasets/1d5e13e8-035b-49d7-a9ce-823cb6ad78a2

## File

- [BGO(-102)HVPE_full_230811_clean.pdf](https://mdr.nims.go.jp/filesets/6aa4949a-bbbe-4bb2-bb85-46fa9d9e3d49/download) ([Detail](https://mdr.nims.go.jp/filesets/6aa4949a-bbbe-4bb2-bb85-46fa9d9e3d49.md))

## Id

1d5e13e8-035b-49d7-a9ce-823cb6ad78a2

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-07T05:39:47.331601Z

## Updated at

2024-08-30T23:31:17.108129Z

## Published at

2024-08-30T23:31:17.191930Z

## Doi

https://doi.org/10.48505/nims.4352

## First published url

https://doi.org/10.1088/1361-6641/acf241

## Date published

2023-10-01

## Recorded date published

2023-10-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Homoepitaxial growth of (-102) β-Ga2O3 by halide vapor phase epitaxy
  title_type: original
  lang: en

## Description

- description: We demonstrated halide vapor phase epitaxy of β-Ga2O3 on a native (-102)
    substrate, which should be scalable and useful for the formation of vertical fins
    and trenches with smooth (100)-faceted sidewalls using plasma-free microfabrication
    techniques, e.g., selective area growth and gas etching, for use in power device
    applications. No misoriented domains were detected in the epiwafer during X-ray
    pole figure measurements. The full width at half maximum values of the X-ray rocking
    curves of the epiwafer were virtually the same as those of the bare substrate.
    No domain boundaries were found using scanning transmission electron microscopy
    at the film/substrate interface. The growth rate was as high as 23 μm/h, which
    was comparable to the rate for a (001) epilayer that was grown simultaneously.
  description_type: abstract
  lang: eng

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
  organization: National Institute for Materials Science
- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: β-Ga2O3
  schema: not_defined
- subject: HVPE
  schema: not_defined

## Rights

- description: "© 2023 IOP Publishing Ltd  <br>This is an author-created, un-copyedited
    version of an article accepted for publication/published\r\nin Semiconductor Science
    and Technology. IOP Publishing Ltd is not responsible for any errors or omissions
    in this version of the manuscript or any version derived from it. The Version
    of Record is available online at https://doi.org/10.1088/1361-6641/acf241.  "
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2023-08-31
end_date: 2024-08-31

## Journal

- title: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  issn: '02681242'
  volume: '38'
  issue: '10'
  start_page: 105003
  end_page: 105003

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 6aa4949a-bbbe-4bb2-bb85-46fa9d9e3d49
  filename: BGO(-102)HVPE_full_230811_clean.pdf
  content_type: application/pdf
  size: 780138
  md5: b4d7077a5f32ec2a8280ecbc7e44fc9e

## Thumbnail

fileset_id: 6aa4949a-bbbe-4bb2-bb85-46fa9d9e3d49
filename: BGO(-102)HVPE_full_230811_clean.pdf