Download file (828KB)
Download as zip (809KB)

コレクション

引用

説明:

Group IVA elements Si and Ge and their compounds possess abundant natural distribution and excellent electrical properties that are widely utilized in Si-based technology. The exploration for potentially high-performance thermoelectric materials within the Group IVA elements is a viable pursuit. In this work, Ca intercalated Germanene -CaGe2 films were grown on sapphire substrates by molecular beam epitaxy. It is found that the partial lack of Ca between the germanene buckled layers effectively increases the Seebeck coefficient without restraining the conductivity. A maximum power factor of 170 μW/mK2 at 523 K, which is 7 times larger than the stoichiometric CaGe2 film, was achieved in Ca0.835Ge2 film by suppression of bipolar effect and formation of a Ca deficient phase. This study presents a promising novel approach to tuning the thermoelectric properties of layered semimetal materials through interlayer atomic modulation which induces the buckled structure of the framework layer, thereby modifying the electronic structure.

権利情報:

• In Copyright
  

  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Zhao Hu, et al. "Enhancement of thermoelectric power factor in CaGe2 films through interlayer atomic modulation" Appl. Phys. Lett. 24 March 2025; 126 (12): 123102. and may be found at https://doi.org/10.1063/5.0250240.

キーワード: thermoelectric

刊行年月日: 2025-03-01

出版者: AIP Publishing

掲載誌:

• Applied Physics Letters (ISSN: 10773118) vol. 126 issue. 12 p. 123102-123102 123102

研究助成金:

• JST-Mirai Program JPMJMI19A1

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5890

公開URL: https://doi.org/10.1063/5.0250240

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-11-11 16:30:25 +0900

MDRでの公開時刻: 2025-11-11 16:24:11 +0900