# Interface-specific excitation of coherent phonons at the buried GaP/Si(001) heterointerface

https://mdr.nims.go.jp/datasets/1c695d83-6090-4b3a-8828-f9a4fdb8b9da

## File

- [Adv Materials Inter - 2025 - Mette - Interface‐Specific Excitation of Coherent Phonons at the Buried GaP Si 001 .pdf](https://mdr.nims.go.jp/filesets/fbc26f96-58d2-4f53-8c6e-6e43f391ca75/download) ([Detail](https://mdr.nims.go.jp/filesets/fbc26f96-58d2-4f53-8c6e-6e43f391ca75.md))

## Id

1c695d83-6090-4b3a-8828-f9a4fdb8b9da

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-12T00:04:43.681425Z

## Updated at

2025-02-12T03:30:18.914721Z

## Published at

2025-02-12T03:30:19.208009Z

## Doi



## First published url

https://doi.org/10.1002/admi.202400573

## Date published

2025-02-09

## Recorded date published

2025-4

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Interface-specific excitation of coherent phonons at the buried GaP/Si(001)
    heterointerface
  title_type: original
  lang: en

## Description

- description: Ultrafast charge-carrier and phonon dynamics at the buried heterointerface
    of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity
    measurements. The carrier-induced reflectivity signal exhibits a resonant enhancement
    at a pump-photon energy of 1.4 eV, which is assigned to an optical transition
    between electronic states at the interface. In addition, the transient re- flectivity
    is modulated by a coherent oscillation at 2 THz, whose amplitude also becomes
    maximum at 1.4 eV. The observed reso- nant behavior of the oscillation, in combination
    with the characteristic wavelength-dependencies of its frequency and its initial
    phase, strongly indicates that the 2-THz mode is a difference-combination mode
    between a GaP-like and a Si-like phonon at the heteroint- erface and that the
    corresponding second-order Raman scattering process can be enhanced by a double
    resonance involving the inter- facial electronic states.
  description_type: abstract
  lang: eng

## Creator

- name: Gerson Mette
  role: author
  organization: Philipps University of Marburg
- name: Kunie Ishioka
  role: author
  orcid: https://orcid.org/0000-0002-2285-8839
  organization: National Institute for Materials Science
  department: Research Center for Energy and Environmental Materials (GREEN)/Battery
    and Cell Materials Field/Battery Materials Analysis Group
- name: Steven Youngkin
  role: author
  organization: Philipps University of Marburg
- name: Wolfgang Stolz
  role: author
  organization: Philipps University of Marburg
- name: Kerstin Volz
  role: author
  organization: Philipps University of Marburg
- name: Ulrich Hoefer
  role: author
  organization: Philipps University of Marburg

## Contact agent



## Publisher

organization: Wiley-Blackwell

## Managing organization



## Keyword

- subject: interface phonon
  schema: not_defined
- subject: semiconductor heterointerface
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Materials Interfaces
  issn: '21967350'
  article_number: '2400573'

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: fbc26f96-58d2-4f53-8c6e-6e43f391ca75
  filename: Adv Materials Inter - 2025 - Mette - Interface‐Specific Excitation of
    Coherent Phonons at the Buried GaP Si 001 .pdf
  content_type: application/pdf
  size: 1927871
  md5: 9889b219472c5978ca16b4f3ea6481f7

## Thumbnail

fileset_id: fbc26f96-58d2-4f53-8c6e-6e43f391ca75
filename: Adv Materials Inter - 2025 - Mette - Interface‐Specific Excitation of Coherent
  Phonons at the Buried GaP Si 001 .pdf