# Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review

https://mdr.nims.go.jp/datasets/1c47e019-f9ba-4251-b351-fd988c6de934

## File

- [micromachines-14-02076.pdf](https://mdr.nims.go.jp/filesets/aed53fad-1e6b-4611-a3bb-76c5357c1970/download) ([Detail](https://mdr.nims.go.jp/filesets/aed53fad-1e6b-4611-a3bb-76c5357c1970.md))

## Id

1c47e019-f9ba-4251-b351-fd988c6de934

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-11-09T07:40:01.084887Z

## Updated at

2024-01-05T13:11:33.149875Z

## Published at

2023-11-13T04:30:12.821623Z

## Doi



## First published url

https://doi.org/10.3390/mi14112076

## Date published

2023-11-08

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: 'Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based
    Semiconductor Devices: A Review'
  title_type: original
  lang: en

## Description

- description: Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant
    advantages over traditional Si-based semiconductors in terms of high-power and
    high-frequency operations. As it has superior properties, such as high operating
    temperatures, high-frequency operation, high breakdown electric field, and enhanced
    radiation resistance, GaN is applied in various fields, such as power electronic
    devices, renewable energy systems, light-emitting diodes, and radio frequency
    (RF) electronic devices. For example, GaN-based high-electron-mobility transistors
    (HEMTs) are used widely in various applications, such as 5G cellular networks,
    satellite communication, and radar systems. When a current flows through the transistor
    channels during operation, the self-heating effect (SHE) deriving from joule heat
    generation causes a significant increase in the temperature. Increases in the
    channel temperature reduce the carrier mobility and cause a shift in the threshold
    voltage, resulting in significant performance degradation.The effects of the growth
    methods, growth conditions, integration methods, and interlayer structures on
    the TBR are summarized. This study provides guidelines for decreasing the TBR
    for thermal management in the design and implementation of GaN-based semiconductor
    devices.
  description_type: abstract
  lang: eng

## Creator

- name: Tianzhuo Zhan
  role: author
- name: Mao Xu
  role: author
- name: Zhi Cao
  role: author
- name: Chong Zheng
  role: author
- name: Hiroki Kurita
  role: author
- name: Fumio Narita
  role: author
- name: Yen-Ju Wu
  role: author
  orcid: https://orcid.org/0000-0003-2647-3407
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Yibin Xu
  role: author
  orcid: https://orcid.org/0000-0001-8600-8748
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Haidong Wang
  role: author
- name: Mengjie Song
  role: author
- name: Wei Wang
  role: author
- name: Yanguang Zhou
  role: author
- name: Xuqing Liu
  role: author
- name: Yu Shi
  role: author
- name: Yu Jia
  role: author
- name: Sujun Guan
  role: author
- name: Tatsuro Hanajiri
  role: author
- name: Toru Maekawa
  role: author
- name: Akitoshi Okino
  role: author
- name: Takanobu Watanabe
  role: author

## Contact agent



## Publisher

organization: MDPI AG

## Managing organization



## Keyword

- subject: thermal boundary resistance, Gallium Nitride, semiconductor, high-electron-mobility
    transistors
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Micromachines
  issn: 2072666X
  volume: '14'
  issue: '11'
  start_page: 2076
  end_page: 2076

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## Measurement method



## Specimen



## Chemical composition



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## Fileset

- id: aed53fad-1e6b-4611-a3bb-76c5357c1970
  filename: micromachines-14-02076.pdf
  content_type: application/pdf
  size: 6327249
  md5: bfa8e06ab0572a961e694035f2cf7bec

## Thumbnail

fileset_id: aed53fad-1e6b-4611-a3bb-76c5357c1970
filename: micromachines-14-02076.pdf