# Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor

https://mdr.nims.go.jp/datasets/1b18aa39-366d-4c8f-8867-3361e25df387

## File

- [eaaw2347.full.pdf](https://mdr.nims.go.jp/filesets/79596112-ef32-4762-9bd0-0f39a7604469/download) ([Detail](https://mdr.nims.go.jp/filesets/79596112-ef32-4762-9bd0-0f39a7604469.md))

## Id

1b18aa39-366d-4c8f-8867-3361e25df387

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-20T06:56:15.502038Z

## Updated at

2025-02-23T13:51:03.766766Z

## Published at

2025-02-23T13:51:03.886813Z

## Doi



## First published url

https://doi.org/10.1126/sciadv.aaw2347

## Date published

2019-07-05

## Recorded date published

2019-7-5

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Giant gate-tunable bandgap renormalization and excitonic effects in a 2D
    semiconductor
  title_type: original
  lang: en

## Description

- description: 'Understanding the remarkable excitonic effects and controlling the
    exciton binding energies in two-dimensional (2D) semiconductors is crucial in
    unlocking their full potential for use in future photonic and optoelectronic devices.
    Here, we demonstrate large excitonic effects and gate-tunable exciton binding
    energies in single-layer rhenium diselenide (ReSe2) on a back-gated graphene device.
    We used scanning tunneling spectroscopy (STS) and photoluminescence (PL) spectroscopy
    to measure the quasiparticle electronic and optical band gap of single-layer ReSe2
    respectively, yielding a large exciton binding energy of 500 meV. Further, we
    achieved continuous tuning of the electronic band gap and exciton binding energy
    of monolayer ReSe2 by hundreds of meV through electrostatic gating, attributed
    to tunable Coulomb interactions arising from the gate-controlled free carriers
    in graphene. Our findings open a new avenue for controlling the bandgap renormalization
    and exciton binding energies in 2D semiconductors for a wide range of technological
    applications. '
  description_type: abstract
  lang: und

## Creator

- name: Zhizhan Qiu
  role: author
- name: Maxim Trushin
  role: author
- name: Hanyan Fang
  role: author
- name: Ivan Verzhbitskiy
  role: author
- name: Shiyuan Gao
  role: author
- name: Evan Laksono
  role: author
- name: Ming Yang
  role: author
- name: Pin Lyu
  role: author
- name: Jing Li
  role: author
- name: Jie Su
  role: author
- name: Mykola Telychko
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Jishan Wu
  role: author
- name: A. H. Castro Neto
  role: author
- name: Li Yang
  role: author
- name: Goki Eda
  role: author
- name: Shaffique Adam
  role: author
- name: Jiong Lu
  role: author

## Contact agent



## Publisher

organization: American Association for the Advancement of Science (AAAS)

## Managing organization



## Keyword

- subject: Excitonic effects
  schema: not_defined
- subject: ReSe2
  schema: not_defined
- subject: gate-tunable
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Science Advances
  issn: '23752548'
  volume: '5'
  issue: '7'

## Conference



## Related item



## Funding

- identifier: FA9550-17-1-0304
  funder_name: Air Force Office of Scientific Research
- identifier: R-607-000-094-133
  funder_name: National University of Singapore Young Investigator Award
- identifier: R-143-000682-112
  funder_name: MOE tier2 grants
- identifier: R-143-000-A06-112
  funder_name: MOE Tier 2 grants
- identifier: R-723-000-001-281
  funder_name: NRF Medium Sized Centre Programme
- identifier: MOE2017-T2-2-140
  funder_name: the Singapore Ministry of Education AcRF Tier2

## Instrument



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



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## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

- id: 79596112-ef32-4762-9bd0-0f39a7604469
  filename: eaaw2347.full.pdf
  content_type: application/pdf
  size: 7419462
  md5: 990a878c90f6b9cc082271617dcb7670

## Thumbnail

fileset_id: 79596112-ef32-4762-9bd0-0f39a7604469
filename: eaaw2347.full.pdf