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説明:

Understanding the remarkable excitonic effects and controlling the exciton binding energies in two-dimensional (2D) semiconductors is crucial in unlocking their full potential for use in future photonic and optoelectronic devices. Here, we demonstrate large excitonic effects and gate-tunable exciton binding energies in single-layer rhenium diselenide (ReSe2) on a back-gated graphene device. We used scanning tunneling spectroscopy (STS) and photoluminescence (PL) spectroscopy to measure the quasiparticle electronic and optical band gap of single-layer ReSe2 respectively, yielding a large exciton binding energy of 500 meV. Further, we achieved continuous tuning of the electronic band gap and exciton binding energy of monolayer ReSe2 by hundreds of meV through electrostatic gating, attributed to tunable Coulomb interactions arising from the gate-controlled free carriers in graphene. Our findings open a new avenue for controlling the bandgap renormalization and exciton binding energies in 2D semiconductors for a wide range of technological applications.

権利情報:

• Creative Commons BY-NC Attribution-NonCommercial 4.0 International
  

キーワード: Excitonic effects, ReSe2, gate-tunable

刊行年月日: 2019-07-05

出版者: American Association for the Advancement of Science (AAAS)

掲載誌:

• Science Advances (ISSN: 23752548) vol. 5 issue. 7

研究助成金:

• Air Force Office of Scientific Research FA9550-17-1-0304
• National University of Singapore Young Investigator Award R-607-000-094-133
• MOE tier2 grants R-143-000682-112
• MOE Tier 2 grants R-143-000-A06-112
• NRF Medium Sized Centre Programme R-723-000-001-281
• the Singapore Ministry of Education AcRF Tier2 MOE2017-T2-2-140

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1126/sciadv.aaw2347

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更新時刻: 2025-02-23 22:51:03 +0900

MDRでの公開時刻: 2025-02-23 22:51:03 +0900