# Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam

https://mdr.nims.go.jp/datasets/19eee5c6-2f67-4744-a668-1b7ae8fe1243

## File

- [Vol.24_No.3_03_Ogiwara.pdf](https://mdr.nims.go.jp/filesets/207d2721-c5cb-4f63-ae71-83864f6983c3/download) ([Detail](https://mdr.nims.go.jp/filesets/207d2721-c5cb-4f63-ae71-83864f6983c3.md))

## Id

19eee5c6-2f67-4744-a668-1b7ae8fe1243

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2021-08-05T16:24:14.264369Z

## Updated at

2024-01-05T13:11:28.711931Z

## Published at

2021-08-13T18:56:56.041398Z

## Doi



## First published url

https://doi.org/10.1384/jsa.24.192

## Date published

2019-03-07

## Recorded date published

2018

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle
    Incidence Ion Beam
  title_type: original
  lang: en

## Description

- description: We have investigated the Auger depth profiling analysis of HfO2/Si
    by the glancing-angle ion beam sputtering method at an incident angle of 7 degree
    from the sample surface with argon ion beam. The depth resolutions of the O KLL
    interface profiles were 0.9 nm and 1.5 nm, at the ion-beam acceleration voltage
    of 2.0 kV and 3.0 kV re-spectively, which were better than the depth resolutions
    at a commonly-used incident angle of 51 degree. However, the ion-beam-induced
    reduction of HfO2 was not suppressed by the glancing-angle ion beam sputtering
    at the ion acceleration voltage of 0.5 kV, which is expected to be the lowest
    damage sputtering condition in this study. The reduction of HfO2 due to preferential
    sputtering of oxygen was observed by the intensity ratio of O KLL and Hf NVV depth
    profiles. It was found that the ratio of preferential sputtering depends on the
    ion incidence angle and the ion acceleration voltage. Under the glancing-angle
    condition, the ratio of preferential sputtering greatly de-pended on the ion accelerating
    voltage, and it was found that the lower the ion acceleration voltage is, the
    easier it is for O to be sputtered than Hf. On the other hand, under the commonly-used
    incident angle conditions, the ratio of preferential sputtering did not depend
    much on the ion acceleration voltage. The dependency of the ratio of preferential
    sputtering on the ion incidence angle can be explained by the difference in sputtering
    models depend-ing on the ion incidence angle. It was found that the O KLL depth
    profiles showed partial recovery of the oxygen intensity near the interface of
    HfO2/Si, which can be related to oxygen generated by the ion-beam-induced decom-position
    of the diffusion layer at the interface. In addition, the glancing-angle ion beam
    enables the reduction of the effect of recoil implantation of Hf atoms into the
    Si substrate.
  description_type: abstract
  lang: en

## Creator

- name: Yoshikawa, Hideki
  role: author
  orcid: https://orcid.org/0000-0002-7389-8865
- name: Ogiwara, Toshiya
  role: author
  orcid: https://orcid.org/0000-0002-7376-6571
- name: Nagata, Takahiro
  role: author
  orcid: https://orcid.org/0000-0002-8591-2943

## Contact agent



## Publisher

organization: Surface Analysis Society of Japan

## Managing organization



## Keyword

- subject: Auger Depth Profiling analysis
  schema: not_defined
- subject: HfO2/Si
  schema: not_defined
- subject: Ultra Low Angle Incidence Ion Beam
  schema: not_defined

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## Fileset

- id: 207d2721-c5cb-4f63-ae71-83864f6983c3
  filename: Vol.24_No.3_03_Ogiwara.pdf
  content_type: application/pdf
  size: 1538838
  md5: 4492774ad7df226f0e4ac68c1959c9fe

## Thumbnail

fileset_id: 207d2721-c5cb-4f63-ae71-83864f6983c3
filename: Vol.24_No.3_03_Ogiwara.pdf