# Controlled polarity inversion in GaAs/Ge/GaAs{111} heterostructures

https://mdr.nims.go.jp/datasets/19d65d0f-aae7-482b-85f0-59893c3a38b8

## File

- [APL25-AR-02509.pdf](https://mdr.nims.go.jp/filesets/9678dacb-86a6-4b22-8ff6-ea1a56b8a2c3/download) ([Detail](https://mdr.nims.go.jp/filesets/9678dacb-86a6-4b22-8ff6-ea1a56b8a2c3.md))
- [Supplementary materials.pdf](https://mdr.nims.go.jp/filesets/94b6a216-efc0-4de0-a843-aeb96f5c1b8a/download) ([Detail](https://mdr.nims.go.jp/filesets/94b6a216-efc0-4de0-a843-aeb96f5c1b8a.md))

## Id

19d65d0f-aae7-482b-85f0-59893c3a38b8

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-05-20T02:37:39.203964Z

## Updated at

2025-05-20T07:30:12.347311Z

## Published at

2025-05-20T07:25:06.138060Z

## Doi

https://doi.org/10.48505/nims.5488

## First published url

https://doi.org/10.1063/5.0271426

## Date published

2025-05-19

## Recorded date published

2025-5-19

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Controlled polarity inversion in GaAs/Ge/GaAs{111} heterostructures
  title_type: original
  lang: en

## Description

- description: We have fabricated the GaAs/Ge/GaAs heterostructures on the {111}-oriented
    substrates using molecular-beam epitaxy for quasi-phase matching applications
    in nonlinear optics. The nonlinear optical coefficient of GaAs is beyond that
    of conventional LiNbO3, enabling more efficient generation of entangled photon
    pairs via parametric downconversion. We show that GaAs films with either (111)A-
    or (111)B-orientation could be grown on the Ge/GaAs{111} substrates, regardless
    of the polarity of the initial substrates; the (111)A- and (111)B-oriented GaAs
    overlayers were grown when the surfaces of Ge interlayers on the GaAs{111} substrates
    were terminated with 1 monolayer (ML)-Ga and 1 ML-In, respectively. Both (111)A-
    and (111)B-oriented GaAs overlayers have atomically flat surfaces and are almost
    free of defects, such as rotational twins and stacking faults. The present results
    provide a promising way to improve the efficiency of nonlinear optical processes
    in quasi-phase matching devices.
  description_type: abstract
  lang: und

## Creator

- name: Akihiro Ohtake
  role: author
  orcid: https://orcid.org/0000-0002-3519-4613
- name: Yusuke Hayashi
  role: author
  orcid: https://orcid.org/0000-0001-5672-1497

## Contact agent



## Publisher

organization: AIP Publishing

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## Keyword

- subject: Heterostructures
  schema: not_defined
- subject: Quasi-phase matching
  schema: not_defined
- subject: Surface structure
  schema: not_defined
- subject: molecular-beam epitaxy
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Akihiro Ohtake, Yusuke Hayashi; Controlled polarity inversion in GaAs/Ge/GaAs{111}
    heterostructures. Appl. Phys. Lett. 19 May 2025; 126 (20): 201601 and may be found
    at https://doi.org/10.1063/5.0271426.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '126'
  issue: '20'

## Conference



## Related item



## Funding

- identifier: JP23K04592
  funder_name: JSPS
  description: カルコゲナイド系層状物質の高品質ヘテロ積層構造：ＭＢＥ法による成長技術の開発

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## Fileset

- id: 9678dacb-86a6-4b22-8ff6-ea1a56b8a2c3
  filename: APL25-AR-02509.pdf
  content_type: application/pdf
  size: 1221059
  md5: 73d4f5e1325ce4a0d776a8ce12354f3e
- id: 94b6a216-efc0-4de0-a843-aeb96f5c1b8a
  filename: Supplementary materials.pdf
  content_type: application/pdf
  size: 15004192
  md5: 41ee70090194d6cefadaac65522421f7

## Thumbnail

fileset_id: 9678dacb-86a6-4b22-8ff6-ea1a56b8a2c3
filename: APL25-AR-02509.pdf