# Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications

https://mdr.nims.go.jp/datasets/19a3a136-feaa-40d8-82c9-2d8c73285243

## File

- [s40820-022-01001-5.pdf](https://mdr.nims.go.jp/filesets/626bad5f-e9a4-4934-867b-20179099b314/download) ([Detail](https://mdr.nims.go.jp/filesets/626bad5f-e9a4-4934-867b-20179099b314.md))

## Id

19a3a136-feaa-40d8-82c9-2d8c73285243

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-25T08:38:22.302371Z

## Updated at

2025-02-26T07:30:26.321897Z

## Published at

2025-02-26T07:30:26.472332Z

## Doi



## First published url

https://doi.org/10.1007/s40820-022-01001-5

## Date published

2022-12-29

## Recorded date published

2023-12

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Graphene Bridge Heterostructure Devices for Negative Differential Transconductance
    Circuit Applications
  title_type: original
  lang: en

## Description

- description: Two-dimensional van der Waals (2D vdW) material-based heterostructure
    devices have been widely studied for high-end electronic applications owing to
    their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge
    heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type
    molybdenum disulfide as a channel material for field-effect transistors (FET).
    Unlike conventional FET operation, our Gr-bridge devices exhibit nonclassical
    transfer characteristics (humped transfer curve), thus possessing a negative differential
    transconductance. These phenomena are interpreted as the operating behavior in
    two series-connected FETs, and they result from the gate-tunable contact capacity
    of the Gr-bridge layer. Multi-value logic inverters and frequency tripler circuits
    are successfully demonstrated using ambipolar semiconductors with narrow- and
    wide-bandgap materials as more advanced circuit applications based on nonclassical
    transfer characteristics. Thus, we believe that our innovative and straightforward
    device structure engineering will be a promising technique for future multi-functional
    circuit applications of 2D nanoelectronics.
  description_type: abstract
  lang: und

## Creator

- name: Minjong Lee
  role: author
- name: Tae Wook Kim
  role: author
- name: Chang Yong Park
  role: author
- name: Kimoon Lee
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Min-gu Kim
  role: author
- name: Do Kyung Hwang
  role: author
- name: Young Tack Lee
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: multi-value logic
  schema: not_defined
- subject: Graphene-bridge heterostructure
  schema: not_defined
- subject: ambipolar semiconductor
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Nano-Micro Letters
  issn: '23116706'
  volume: '15'
  issue: '1'
  article_number: '22'

## Conference



## Related item



## Funding

- funder_name: Shanghai Jiao Tong University

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Fileset

- id: 626bad5f-e9a4-4934-867b-20179099b314
  filename: s40820-022-01001-5.pdf
  content_type: application/pdf
  size: 6861503
  md5: 86f2aea1a3e8cca13cadb43546f9cb71

## Thumbnail

fileset_id: 626bad5f-e9a4-4934-867b-20179099b314
filename: s40820-022-01001-5.pdf