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説明:

Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors (FET). Unlike conventional FET operation, our Gr-bridge devices exhibit nonclassical transfer characteristics (humped transfer curve), thus possessing a negative differential transconductance. These phenomena are interpreted as the operating behavior in two series-connected FETs, and they result from the gate-tunable contact capacity of the Gr-bridge layer. Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow- and wide-bandgap materials as more advanced circuit applications based on nonclassical transfer characteristics. Thus, we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: multi-value logic, Graphene-bridge heterostructure, ambipolar semiconductor

刊行年月日: 2022-12-29

出版者: Springer Science and Business Media LLC

掲載誌:

• Nano-Micro Letters (ISSN: 23116706) vol. 15 issue. 1 22

研究助成金:

• Shanghai Jiao Tong University

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1007/s40820-022-01001-5

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更新時刻: 2025-02-26 16:30:26 +0900

MDRでの公開時刻: 2025-02-26 16:30:26 +0900