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説明:

Coulomb interactions in atomically thin materials are uniquely sensitive to variations in the dielectric screening of the environment, which can be used to control quasiparticles and exotic quantum many-body phases. A static approximation of the dielectric response, where increased dielectric screening is predicted to cause an energy redshift of the exciton resonance, has been until now sufficient. Here, we use charge-tunable exciton resonances to study screening effects in transition metal dichalcogenide monolayers embedded in materials with dielectric constants ranging from 4 to more than 1000. In contrast to expectations, we observe a blueshift of the exciton resonance exceeding 30 meV for larger dielectric constant environments. By employing a dynamical screening model, we find that while the exciton binding energy remains mostly controlled by the static dielectric response, the exciton self-energy is dominated by the high-frequency response. Dielectrics with markedly different static and high-frequency screening enable the selective addressing of distinct many-body effects in layered materials and their heterostructures, expanding the tunability range and offering new routes to detect and control correlated quantum many-body states and to design optoelectronic and quantum devices.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: dielectric screening, Coulomb interactions
, atomically thin semiconductors


刊行年月日: 2025-02-04

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Nano (ISSN: 19360851) vol. 19 issue. 4 p. 4269-4278

研究助成金:

• Bundesministerium f?r Bildung und Forschung 13N15760
• Bundesministerium f?r Bildung und Forschung 13N16214
• Bundesministerium f?r Bildung und Forschung 16K15Q027
• Ministry of Education, Culture, Sports, Science and Technology
• Basic Energy Sciences DE-SC0014349
• Basic Energy Sciences DOE-SC0020653
• Deutsche Forschungsgemeinschaft DI 2013/5-1
• Deutsche Forschungsgemeinschaft DI 2013/5-2
• Deutsche Forschungsgemeinschaft EXC-2089/1-390776260
• Deutsche Forschungsgemeinschaft EXC-2111/390814868
• Deutsche Forschungsgemeinschaft FI 947/5-1
• Deutsche Forschungsgemeinschaft FI 947/6-1
• Deutsche Forschungsgemeinschaft FI 947/8-1
• Deutsche Forschungsgemeinschaft INST 95/1496-1
• Deutsche Forschungsgemeinschaft INST 95/1654-1
• Deutsche Forschungsgemeinschaft INST 95/1719-1
• Bayerisches Staatsministerium f?r Wissenschaft und Kunst
• Japan Society for the Promotion of Science 20H00354
• Japan Society for the Promotion of Science 23H02052
• International Max Planck Research School for Quantum Science and Technology
• Division of Electrical, Communications and Cyber Systems ECCS 2052527
• Division of Civil, Mechanical and Manufacturing Innovation CMMI 1825594
• Division of Civil, Mechanical and Manufacturing Innovation CMMI 2129412
• Alexander von Humboldt-Stiftung
• Division of Materials Research DMR 2111812

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acsnano.4c11563

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更新時刻: 2026-02-16 17:15:39 +0900

MDRでの公開時刻: 2026-02-16 13:57:29 +0900