# Polymeric microwave rectifiers enabled by monolayer-thick ionized donors

https://mdr.nims.go.jp/datasets/189b3e49-13cb-4e50-b779-a9420e192df9

## File

- [sciadv.adv9952 (2).pdf](https://mdr.nims.go.jp/filesets/bf0a5a9e-2d7e-43a7-a632-89f7f5e41cb8/download) ([Detail](https://mdr.nims.go.jp/filesets/bf0a5a9e-2d7e-43a7-a632-89f7f5e41cb8.md))

## Id

189b3e49-13cb-4e50-b779-a9420e192df9

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-11-17T07:14:38.660839Z

## Updated at

2025-11-18T03:30:03.571966Z

## Published at

2025-11-18T03:23:37.862228Z

## Doi



## First published url

https://doi.org/10.1126/sciadv.adv9952

## Date published

2025-09-19

## Recorded date published

2025-9-19

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Polymeric microwave rectifiers enabled by monolayer-thick ionized donors
  title_type: original
  lang: en

## Description

- description: Solution processing of polymeric semiconductors provides a facile way
    to fabricate functional diodes. However, energy barriers at metal-semiconductor
    interfaces often limit their performance. Herein, we report rectifying polymer
    diodes with dramatically modified energy-level alignments. The gold electrode
    surface 1 was treated with a dimeric metal complex, which resulted in a shallow
    work function of 3.7 eV by forming a monolayer-thick ionized donor layer. When
    a polymeric semiconductor was coated on the treated electrode, most of the ionized
    donors remained at the metal-semiconductor interface. The confined ionized donors
    with the ideally thin thickness enabled fabrication of a polymer diode with a
    forward current density of over 100 Acm−2. Furthermore, a power conversion efficiency
    of 7.9% was observed for rectification at a microwave frequency of 920 MHz, which
    is orders-of-magnitude higher than that reported for organic diodes. Our findings
    will pave a way to solution-processed high-frequency and high-power devices.
  description_type: abstract
  lang: und

## Creator

- name: Nobutaka Osakabe
  role: author
- name: Jeongeun Her
  role: author
- name: Takahiro Kaneta
  role: author
- name: Akiko Tajima
  role: author
- name: Elena Longhi
  role: author
- name: Kan Tang
  role: author
- name: Kazuhiro Fujimori
  role: author
- name: Stephen Barlow
  role: author
- name: Seth R. Marder
  role: author
- name: Shun Watanabe
  role: author
- name: Jun Takeya
  role: author
  orcid: https://orcid.org/0000-0002-7003-1350
  organization: National Institute for Materials Science
- name: Yu Yamashita
  role: author
  orcid: https://orcid.org/0000-0001-7966-3197
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: American Association for the Advancement of Science (AAAS)

## Managing organization



## Keyword

- subject: organic semiconductor
  schema: not_defined
- subject: doping
  schema: not_defined
- subject: diode
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Science Advances
  issn: '23752548'
  volume: '11'
  issue: '38'
  article_number: eadv9952

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



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## Fileset

- id: bf0a5a9e-2d7e-43a7-a632-89f7f5e41cb8
  filename: sciadv.adv9952 (2).pdf
  content_type: application/pdf
  size: 444187
  md5: '027882a34afb6a1897dcee39492704b3'

## Thumbnail

fileset_id: bf0a5a9e-2d7e-43a7-a632-89f7f5e41cb8
filename: sciadv.adv9952 (2).pdf