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Solution processing of polymeric semiconductors provides a facile way to fabricate functional diodes. However, energy barriers at metal-semiconductor interfaces often limit their performance. Herein, we report rectifying polymer diodes with dramatically modified energy-level alignments. The gold electrode surface 1 was treated with a dimeric metal complex, which resulted in a shallow work function of 3.7 eV by forming a monolayer-thick ionized donor layer. When a polymeric semiconductor was coated on the treated electrode, most of the ionized donors remained at the metal-semiconductor interface. The confined ionized donors with the ideally thin thickness enabled fabrication of a polymer diode with a forward current density of over 100 Acm−2. Furthermore, a power conversion efficiency of 7.9% was observed for rectification at a microwave frequency of 920 MHz, which is orders-of-magnitude higher than that reported for organic diodes. Our findings will pave a way to solution-processed high-frequency and high-power devices.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: organic semiconductor, doping, diode

刊行年月日: 2025-09-19

出版者: American Association for the Advancement of Science (AAAS)

掲載誌:

• Science Advances (ISSN: 23752548) vol. 11 issue. 38 eadv9952

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1126/sciadv.adv9952

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更新時刻: 2025-11-18 12:30:03 +0900

MDRでの公開時刻: 2025-11-18 12:23:37 +0900