# Low-Energy Dissipation Diamond MEMS

https://mdr.nims.go.jp/datasets/188671f3-3ea8-4105-928f-976a527b93a4

## File

- [Maunscript (Clean).docx](https://mdr.nims.go.jp/filesets/d089dc4d-d82e-4e5a-b88b-4688b0134343/download) ([Detail](https://mdr.nims.go.jp/filesets/d089dc4d-d82e-4e5a-b88b-4688b0134343.md))

## Id

188671f3-3ea8-4105-928f-976a527b93a4

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-10-11T01:03:01.911474Z

## Updated at

2025-07-28T23:30:21.439623Z

## Published at

2025-07-28T23:17:54.524012Z

## Doi

https://doi.org/10.48505/nims.4838

## First published url

https://doi.org/10.1021/accountsmr.4c00139

## Date published

2024-09-27

## Recorded date published

2024-9-27

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Low-Energy Dissipation Diamond MEMS
  title_type: original
  lang: en

## Description

- description: "In this Account, we provide an overview of the recent research and
    strategies in SCD diamond MEMS for achieving high Q-factors, focusing on those
    fabricated by the smart-cut method developed in our lab. We start with the concept
    of diamond MEMS, covering structure fabrication, fundamentals, and applications.
    A comprehensive discussion of the energy dissipation mechanisms on the Q factors
    in diamond MEMS resonators is provided. The approaches to enhance the Q-factor
    of diamond resonators including (1) the\r\ngrowth of high crystal quality SCD
    epilayer on the ion-implanted substrate, (2) defects engineering, and (3) strain
    engineering by thinning the resonator to around 100 nm thick are presented. In
    the smart-cut method, the ∼100 nm thick defective layer contributes to the main
    intrinsic energy loss. By combing the growth of a high crystal quality diamond
    epilayer above the defective layer and the atomic scale etching of the defective
    layer, the Q-factors could be improved from thousands to over one million at room
    temperature, the highest among all the semiconductors. The intrinsic high Q-factors
    of SCD MEMS are also due to the well controlled\r\npurity of the diamond epilayer
    and the ultrawide bandgap energy of diamond. Through strain engineering of the
    SCD MEMS beam to nanoscale, the Q-factor is expected to be further enhanced. These
    strategies \r\n represent pivotal steps in advancing the performance and applicability
    of diamond MEMS resonators."
  description_type: abstract
  lang: und

## Creator

- name: Guo Chen
  role: author
- name: Satoshi Koizumi
  role: author
  orcid: https://orcid.org/0000-0003-4961-5658
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Yasuo Koide
  role: author
  orcid: https://orcid.org/0000-0001-8321-9822
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Meiyong Liao
  role: author
  orcid: https://orcid.org/0000-0003-1361-4266
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: Diamond
  schema: not_defined
- subject: MEMS
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Work
    that appeared in final form in Accounts of Materials Research, copyright © 2024
    Accounts of Materials Research. Co-published by ShanghaiTech University and American
    Chemical Society after peer review and technical editing by the publisher. To
    access the final edited and published work see https://doi.org/10.1021/accountsmr.4c00139
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-07-29
end_date: 2025-07-29

## Journal

- title: Accounts of Materials Research
  issn: '26436728'
  volume: '5'
  issue: '9'
  start_page: 1087
  end_page: 1096

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## Related item



## Funding

- identifier: JPJSBP120227203
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JPMXP1223NM5297
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: 22K18957
  funder_name: Japan Society for the Promotion of Science
- identifier: 24H00287
  funder_name: Japan Society for the Promotion of Science
- identifier: '202006400023'
  funder_name: China Scholarship Council
- funder_name: Chinese Academy of Sciences

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## Fileset

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  filename: Maunscript (Clean).docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 5953676
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## Thumbnail

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filename: Maunscript (Clean).docx