# Kapitza-resistance-like exciton dynamics in atomically flat MoSe2-WSe2 lateral heterojunction

https://mdr.nims.go.jp/datasets/16c19fa5-f117-4bb1-aea7-c65a9dd7cba2

## Files

- [s41467-023-41538-6.pdf](https://mdr.nims.go.jp/filesets/bb791bd7-83d5-423e-b48a-147d8969a502/download) ([Detail](https://mdr.nims.go.jp/filesets/bb791bd7-83d5-423e-b48a-147d8969a502.md))

## Id

16c19fa5-f117-4bb1-aea7-c65a9dd7cba2

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-07T08:11:56.090802Z

## Updated at

2025-02-11T03:30:33.736987Z

## Published at

2025-02-11T03:30:33.851251Z

## Doi



## First published url

https://doi.org/10.1038/s41467-023-41538-6

## Date published

2023-09-21

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Kapitza-resistance-like exciton dynamics in atomically flat MoSe2-WSe2 lateral
    heterojunction
  title_type: original
  lang: en

## Description

- description: Being able to control the neutral excitonic flux is a mandatory step
    for the development of future room-temperature two-dimensional excitonic devices.
    Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely
    robust and mobile excitons are highly attractive in this regard. However, generating
    an efficient and controlled exciton transport over long distances is a very challenging
    task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure
    (MoSe2-WSe2) transforms the isotropic exciton diffusion into a unidirectional
    excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy
    (TEPL) and a modified exciton transfer model, we show a non-continuous exciton
    density distribution on each side of the interface, analogous to the Kapitza resistance
    effect. By comparing different heterostructures with or without top hexagonal
    boron nitride (hBN) layer, we deduce that the transport properties, can be controlled
    by the exciton density through near-field engineering and/or laser power density.
    This work provides a new approach for controlling the neutral exciton flow, which
    is key toward the conception of excitonic devices.
  description_type: abstract
  lang: und

## Creator

- name: Hassan Lamsaadi
  role: author
- name: Dorian Beret
  role: author
- name: Ioannis Paradisanos
  role: author
- name: Pierre Renucci
  role: author
- name: Delphine Lagarde
  role: author
- name: Xavier Marie
  role: author
- name: Bernhard Urbaszek
  role: author
- name: Ziyang Gan
  role: author
- name: Antony George
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Andrey Turchanin
  role: author
- name: Laurent Lombez
  role: author
- name: Nicolas Combe
  role: author
- name: Vincent Paillard
  role: author
- name: Jean-Marie Poumirol
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: eutral excitonic flux
  schema: not_defined
- subject: transition metal dichalcogenides
  schema: not_defined
- subject: " exciton Kapitza resistance"
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Nature Communications
  issn: '20411723'
  volume: '14'
  issue: '1'
  article_number: '5881'

## Conference



## Related item



## Funding

- identifier: ANR-21-CE30-0042
  funder_name: Agence Nationale de la Recherche
- identifier: ANR-19-CE24-0020-01
  funder_name: Agence Nationale de la Recherche

## Instrument



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## Measurement method



## Specimen



## Chemical composition



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## Fileset

- id: bb791bd7-83d5-423e-b48a-147d8969a502
  filename: s41467-023-41538-6.pdf
  content_type: application/pdf
  size: 2569842
  md5: ac90f90b4a7b97f49e3c8c29162bed71

## Thumbnail

fileset_id: bb791bd7-83d5-423e-b48a-147d8969a502
filename: s41467-023-41538-6.pdf