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Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe2-WSe2) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a non-continuous exciton density distribution on each side of the interface, analogous to the Kapitza resistance effect. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties, can be controlled by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: eutral excitonic flux, transition metal dichalcogenides, exciton Kapitza resistance

刊行年月日: 2023-09-21

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Communications (ISSN: 20411723) vol. 14 issue. 1 5881

研究助成金:

• Agence Nationale de la Recherche ANR-21-CE30-0042
• Agence Nationale de la Recherche ANR-19-CE24-0020-01

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41467-023-41538-6

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更新時刻: 2025-02-11 12:30:33 +0900

MDRでの公開時刻: 2025-02-11 12:30:33 +0900