# Plasma-assisted crystallization of germanium monosulfide in sub-100 nm on-insulator molecular-beam deposited thin films

https://mdr.nims.go.jp/datasets/16bb74b9-b5e0-4269-863d-585bfead4f55

## File

- [Source Files_Manuscript.docx](https://mdr.nims.go.jp/filesets/05ae489e-8363-4c50-9b6e-c46b170be7d8/download) ([Detail](https://mdr.nims.go.jp/filesets/05ae489e-8363-4c50-9b6e-c46b170be7d8.md))

## Id

16bb74b9-b5e0-4269-863d-585bfead4f55

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-10-16T05:28:37.092073Z

## Updated at

2025-10-16T07:51:55.004360Z

## Published at

2026-09-04T23:25:03.730447Z

## Doi

https://doi.org/10.48505/nims.5817

## First published url

https://doi.org/10.35848/1347-4065/adf8f8

## Date published

2025-09-01

## Recorded date published

2025-9-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Plasma-assisted crystallization of germanium monosulfide in sub-100 nm on-insulator
    molecular-beam deposited thin films
  title_type: original
  lang: en

## Description

- description: 'Germanium Monosulfide (GeS) is a semiconducting 2D material that shows
    significant promise for use in logic devices due to its high carrier mobility
    and direct band gap. However, thickness-controlled and industry compatible synthesis
    of crystalline GeS is yet to be realized. In this study, by utilizing RF plasma
    cracking for sulfur during film synthesis, the in-plane on-insulator crystallization
    of GeS from sub-100 nm amorphous germanium-sulfur films can be realized via atmospheric
    pressure annealing at 400 °C. The effect of plasma power on molecular-beam deposited
    films is more finely investigated, revealing a positive trend between plasma power
    and film sulfur incorporation and thickness and increases in crystallization-inhibiting
    film sp3 behavior are noticed at plasma powers beyond 61W. '
  description_type: abstract
  lang: und

## Creator

- name: Ahmed Mahmoud
  role: author
  orcid: https://orcid.org/0000-0002-6944-4975
- name: Ryo Matsumura
  role: author
  orcid: https://orcid.org/0000-0003-2303-4978
- name: Naoki Fukata
  role: author
  orcid: https://orcid.org/0000-0002-0986-8485

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: germanium sulfide
  schema: not_defined

## Rights

- description: This is the Accepted Manuscript version of an article accepted for
    publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not
    responsible for any errors or omissions in this version of the manuscript or any
    version derived from it.  The Version of Record is available online at https://doi.org/10.35848/1347-4065/adf8f8.
  identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-09-05
end_date: 2026-09-05

## Journal

- title: Japanese Journal of Applied Physics
  issn: '00214922'
  volume: '64'
  issue: '9'

## Conference



## Related item



## Funding

- identifier: JP20K14796
  funder_name: JSPS
  description: 科研費若手研究
- identifier: JP21H04642
  funder_name: JSPS
  description: 科研費基盤A
- identifier: JP23K13370
  funder_name: JSPS
  description: 科研費若手研究

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Specific property for specimen



## Process for specimen treatment



## Computational method



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## Fileset

- id: 05ae489e-8363-4c50-9b6e-c46b170be7d8
  filename: Source Files_Manuscript.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 10778671
  md5: 469986d5a43b2c5d1a2b58136e81b37b

## Thumbnail

fileset_id: 05ae489e-8363-4c50-9b6e-c46b170be7d8
filename: Source Files_Manuscript.docx