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説明:

The electronic quality of two-dimensional (2D) systems is crucial for exploring quantum transport phenomena. In semiconductor heterostructures, decades of optimization have yielded record-quality 2D gases with transport and quantum mobilities reaching close to 108 and 106 cm2 V-1 s-1, respectively. Although the quality of graphene devices has also been improving, it remains comparatively lower. Here we report a transformative improvement in the electronic quality of graphene by employing graphite gates placed in its immediate proximity, at 1 nm separation. The resulting screening reduces charge inhomogeneity by two orders of magnitude, bringing it down to a few 107 cm-2 and limiting potential fluctuations to <1 meV. Quantum mobilities reach 107 cm2 V-1 s-1, surpassing by an order of magnitude those even in the highest-quality semiconductor heterostructures, while transport mobilities match their record. This quality enables Shubnikov – de Haas oscillations in fields as low as 1 mT, quantum Hall plateaus at 5 mT and 10-μm-scale ballistic transport in the Dirac electron- hole plasma. Our results show a reliable route to a new level of electronic quality, not only for graphene but also for other 2D materials and their heterostructures.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: proximity screening, graphene, electronic quality

刊行年月日: 2025-08-21

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature (ISSN: 00280836) vol. 644 issue. 8077 p. 646-651

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41586-025-09386-0

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更新時刻: 2026-05-18 10:14:35 +0900

MDRでの公開時刻: 2026-05-18 12:23:10 +0900