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Trapped interlayer excitons (IXs) in MoSe2-WSe2 heterobilayers have generated interest for use as single quantum emitter arrays and an opportunity to study moiré physics in transition metal dichalcogenide (TMD) heterostructures. IXs are spatially indirectly excitons comprised of an electron in the MoSe2 layer bound to a hole in the WSe2 layer. Previous reports of spectrally narrow (<1 meV) photoluminescence (PL) emission lines at low temperature have been attributed to IXs localized by the moiré potential between the TMD layers. Here, we show that spectrally narrow IX PL lines are present even when the moiré potential is suppressed by inserting a bilayer hBN spacer between the TMD layers. We directly compare the doping, electric field, and magnetic field, and temperature dependence of IXs in a directly contacted MoSe2-WSe2 region to those separated by bilayer hBN. Our results show that the localization potential resulting in the narrow PL lines is independent of the moiré potential, and instead likely due to extrinsic effects such as nanobubbles or defects. We show that while the doping, electric field, and temperature dependence of the narrow IX lines is similar for both regions, their excitonic g-factors have opposite signs, indicating that the IXs in the directly contacted region are trapped by both moiré and extrinsic localization potentials.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Interlayer excitons, photoluminescence, moiré potential

刊行年月日: 2022-09-12

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Communications (ISSN: 20411723) vol. 13 issue. 1 5354

研究助成金:

• National Science Foundation DMR-2003583

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41467-022-33082-6

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更新時刻: 2025-02-27 12:31:01 +0900

MDRでの公開時刻: 2025-02-27 12:31:01 +0900