# Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO<sub>2</sub> Process

https://mdr.nims.go.jp/datasets/15e87626-2621-4167-bd1b-364d5192db12

## File

- [Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_085003.pdf](https://mdr.nims.go.jp/filesets/93cd2ad3-db94-4d46-abaf-6bed89c9d162/download) ([Detail](https://mdr.nims.go.jp/filesets/93cd2ad3-db94-4d46-abaf-6bed89c9d162.md))

## Id

15e87626-2621-4167-bd1b-364d5192db12

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-08-28T22:44:18.959044Z

## Updated at

2024-09-02T03:30:27.000457Z

## Published at

2024-09-02T03:30:27.265331Z

## Doi



## First published url

https://doi.org/10.1149/2162-8777/ad6fd2

## Date published

2024-08-01

## Recorded date published

2024-8-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: 'Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties:
    A Dummy SiO<sub>2</sub> Process'
  title_type: original
  lang: en

## Description

- description: We report a simple and effective method for improving dielectric/GaN
    interface properties. In the process, a 5 nm-thick SiO2 layer was deposited onto
    a GaN(0001) substrate via plasma-enhanced atomic layer deposition, followed by
    annealing at 800 °C for 300 s under a flowing N2 atmosphere. The SiO2 layer was
    then removed using buffered HF solution, and Pt/Al2O3/GaN metal-oxide-semiconductor
    capacitors were fabricated on the substrate. Positive-bias stress tests revealed
    that the flat-band voltage shifts were substantially reduced for devices fabricated
    using this process, probably because of improved interface crystallinity. This
    method can also be applied to other dielectric/GaN systems.
  description_type: abstract
  lang: eng

## Creator

- name: Yoshihiro Irokawa
  role: author
  orcid: https://orcid.org/0000-0002-6531-4356
  organization: National Institute for Materials Science
- name: Toshihide Nabatame
  role: author
  orcid: https://orcid.org/0000-0002-5973-0230
  organization: National Institute for Materials Science
- name: Tomomi Sawada
  role: author
  organization: National Institute for Materials Science
- name: Manami Miyamoto
  role: author
- name: Hiromi Miura
  role: author
- name: Kazuhito Tsukagoshi
  role: author
  orcid: https://orcid.org/0000-0001-9710-2692
  organization: National Institute for Materials Science
- name: Yasuo Koide
  role: author
  orcid: https://orcid.org/0000-0001-8321-9822
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: The Electrochemical Society

## Managing organization



## Keyword

- subject: GaN
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: ECS Journal of Solid State Science and Technology
  issn: '21628769'
  volume: '13'
  issue: '8'
  article_number: '085003'

## Conference



## Related item



## Funding

- identifier: JPJ009777
  funder_name: Ministry of Education, Culture, Sports, Science and Technology, Japan

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 93cd2ad3-db94-4d46-abaf-6bed89c9d162
  filename: Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_085003.pdf
  content_type: application/pdf
  size: 1588746
  md5: 4ae8fd481e5305051c6e0e1102fe8a73

## Thumbnail

fileset_id: 93cd2ad3-db94-4d46-abaf-6bed89c9d162
filename: Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_085003.pdf