# Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging

https://mdr.nims.go.jp/datasets/15167623-ab4e-4d13-a0cc-d286b98ec83b

## File

- [031101_1_5.0178995.pdf](https://mdr.nims.go.jp/filesets/36c6a81b-88d5-46e8-9fb3-a72b3b26f469/download) ([Detail](https://mdr.nims.go.jp/filesets/36c6a81b-88d5-46e8-9fb3-a72b3b26f469.md))

## Id

15167623-ab4e-4d13-a0cc-d286b98ec83b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-03-04T01:21:34.295007Z

## Updated at

2024-03-19T07:56:29.589186Z

## Published at

2024-03-19T07:56:29.667491Z

## Doi



## First published url

https://doi.org/10.1063/5.0178995

## Date published

2024-03-01

## Recorded date published

2024-3-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Local defect and mid-gap state analysis of GaN using monochromated EELS combined
    with nanodiffraction and atomic-resolution imaging
  title_type: original
  lang: en

## Description

- description: Enhancement of energy resolution due to evolution of monochromators
    has made electron energy loss spectroscopy (EELS) in transmission electron microscopy
    a practical approach for evaluating mid-gap states of semiconductor materials
    at the nanoscale. However, experimental studies on how actual defective structures
    in local regions relate to mid-gap states are limited. Here, we performed high
    energy resolution EELS (HR-EELS) measurements with an energy resolution of less
    than 100 meV to detect mid-gap states of GaN where various defects were induced
    by Ga-ion implantation and the defect concentration varies in the depth direction.
    The formation of mid-gap states was verified by synchrotron hard X-ray photoelectron
    spectroscopy and the origin of the mid-gap states was investigated via nano-to-atomic-scale
    structural analysis based on scanning transmission electron microscopy (STEM).
    The HR-EELS measurements elucidated depth dependence of valence-loss spectra in
    which intensities corresponding to mid-gap states gradually increase toward the
    surface, while slope at onsets corresponding to interband transition decreases.
    The structural analysis including 4D-STEM and atomic-resolution observation revealed
    the presence of structural disorder and defective structures, suggesting that
    the defective structures include extended defects such as stacking faults and
    domain boundaries. These defective structures were abundant near the surface and
    obviously less in the deeper region. On the basis of these experimental results,
    we conclude that variations of valence-loss spectra have the capability to qualitatively
    evaluate crystal imperfections at the nanoscale.
  description_type: abstract
  lang: und

## Creator

- name: Shunsuke Yamashita
  role: author
  orcid: https://orcid.org/0000-0003-1702-1708
- name: Sei Fukushima
  role: author
- name: Jun Kikkawa
  role: author
  orcid: https://orcid.org/0000-0003-0659-1844
  organization: National Institute for Materials Science (NIMS)
  department: Center for Basic Research on Materials
- name: Ryoji Arai
  role: author
- name: Yuya Kanitani
  role: author
  orcid: https://orcid.org/0009-0002-2154-5571
- name: Koji Kimoto
  role: author
  orcid: https://orcid.org/0000-0002-3927-0492
  organization: National Institute for Materials Science (NIMS)
  department: Center for Basic Research on Materials
- name: Yoshihiro Kudo
  role: author

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: defect
  schema: not_defined
- subject: GaN
  schema: not_defined
- subject: EELS
  schema: not_defined
- subject: 4D-STEM
  schema: not_defined
- subject: HAADF-STEM
  schema: not_defined
- subject: ABF-STEM
  schema: not_defined
- subject: HAXPES
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: APL Materials
  issn: 2166532X
  volume: '12'
  issue: '3'
  article_number: '031101'

## Conference



## Related item



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## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 36c6a81b-88d5-46e8-9fb3-a72b3b26f469
  filename: 031101_1_5.0178995.pdf
  content_type: application/pdf
  size: 8656560
  md5: 3f989959e2d8ab03e4bc538cd2afb0ab

## Thumbnail

fileset_id: 36c6a81b-88d5-46e8-9fb3-a72b3b26f469
filename: 031101_1_5.0178995.pdf