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A high-temperature (HT) stable phase of germanium dichalcogenide (GeS2) was grown in an evacuated quartz ampoule to investigate its transparency range. First, as a starting material for the crystal growth of HT-GeS2, GeS2 glass containing HT-GeS2 crystals was synthesized using our previously improved process for synthesizing polycrystalline sulfide compounds in a conventional horizontal furnace. The HT-GeS2 crystal was grown using the Bridgman method under a temperature gradient of 20–30 ℃/cm. The grown HT-GeS2 single crystal was easily cleaved along the growth direction, and this cleaved surface was identified as the (001) face using X-ray diffraction (XRD). Single-crystal XRD analysis confirmed the growth of an HT-GeS2 single crystal with a monoclinic structure (space group P21/c) and lattice parameters of a = 6.7061(4) Å, b = 16.0877(13) Å, and c = 11.4242(11) Å, and β = 91.069 (8)°. The optical transmittance spectra of the HT-GeS2 single crystals were measured in the visible and mid-infrared (IR) regions, revealing a transparency range of 0.36–22.5 μm. Differential thermal analysis revealed the melting point of HT-GeS2 as 840 ± 1 ℃. The HT-GeS2 single crystal is expected to be a new candidate for IR optical crystal.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: Bridgman technique, Growth from melt, Single crystal growth, Sulfides, Infrared devices

刊行年月日: 2024-09-02

出版者: Elsevier BV

掲載誌:

• Journal of Crystal Growth (ISSN: 00220248) vol. 647 127878

研究助成金:

• Ministry of Education Culture Research and Technology

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4728

公開URL: https://doi.org/10.1016/j.jcrysgro.2024.127878

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更新時刻: 2024-09-06 10:24:48 +0900

MDRでの公開時刻: 2026-09-02 08:25:10 +0900