# Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs

https://mdr.nims.go.jp/datasets/141025ee-c9fe-4e69-beba-3e548dd26942

## File

- [cleaned manuscript.pdf](https://mdr.nims.go.jp/filesets/c2842ad9-6819-46d7-a80d-560d88bf69e4/download) ([Detail](https://mdr.nims.go.jp/filesets/c2842ad9-6819-46d7-a80d-560d88bf69e4.md))

## Id

141025ee-c9fe-4e69-beba-3e548dd26942

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-03-03T23:07:22.892546Z

## Updated at

2024-03-19T07:57:34.144700Z

## Published at

2024-03-19T07:57:34.216652Z

## Doi

https://doi.org/10.48505/nims.4442

## First published url

https://doi.org/10.1109/ted.2024.3356468

## Date published

2024-01-30

## Recorded date published



## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs
  title_type: original
  lang: en

## Description

- description: In this work, we focus on resolving one of great issues of high threshold
    voltage (VTH) values  for the boron-doped diamond (B-diamond) metal-oxide-semiconductor
    field-effect transistors (MOSFETs) reported by now. The VTH  for the B-diamond
    MOSFETs can be further decreased by reducing B-diamond epitaxial layer thickness,
    boron doping concentration, and thickness of oxide insulator. Three MOSFETs with
    different device structures are fabricated on the same oxygen-terminated B-diamond
    channel. The VTH values are lower than 3.4 V with the lowest one of 0.8 V. They
    are much lower than the previous reports values.
  description_type: abstract
  lang: und

## Creator

- name: Jiangwei Liu
  role: author
  orcid: https://orcid.org/0000-0003-2580-7401
  organization: National Institute for Materials Science (NIMS)
  department: Research Center for Electronic and Optical Materials
- name: Tokuyuki Teraji
  role: author
  orcid: https://orcid.org/0000-0002-7731-0547
  organization: National Institute for Materials Science (NIMS)
  department: Research Center for Electronic and Optical Materials
- name: Bo Da
  role: author
  orcid: https://orcid.org/0000-0002-0785-8662
  organization: National Institute for Materials Science (NIMS)
  department: Center for Basic Research on Materials
- name: Yasuo Koide
  role: author
  orcid: https://orcid.org/0000-0001-8321-9822
  organization: National Institute for Materials Science (NIMS)

## Contact agent



## Publisher

organization: Institute of Electrical and Electronics Engineers (IEEE)

## Managing organization



## Keyword

- subject: Boron-doped diamond
  schema: not_defined

## Rights

- description: 'J. Liu, T. Teraji, B. Da and Y. Koide, "Suppression of High Threshold
    Voltage for Boron-Doped Diamond MOSFETs," in IEEE Transactions on Electron Devices,
    vol. 71, no. 3, pp. 1764-1768, March 2024, doi: 10.1109/TED.2024.3356468.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: IEEE Transactions on Electron Devices
  issn: '00189383'
  volume: '71'
  issue: '3'
  start_page: 1764
  end_page: 1768

## Conference



## Related item



## Funding

- identifier: JP23K03966
  funder_name: JSPS KAKENHI Projects
- identifier: 20H05661
  funder_name: JSPS KAKENHI Projects
- identifier: JP20H00313
  funder_name: JSPS KAKENHI Projects
- identifier: JPMXS0118068379
  funder_name: MEXT Q-LEAP
- identifier: JPMJCR1773
  funder_name: JST CREST
- identifier: JPMJMS2062
  funder_name: JST Moonshot Research and Development
- identifier: JPMI00316
  funder_name: MIC Research and Development for Construction of a Global Quantum Cryptography
    Network
- identifier: JPMXP1223NM5006
  funder_name: MEXT ARIM

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## Measurement method



## Specimen



## Chemical composition



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## Fileset

- id: c2842ad9-6819-46d7-a80d-560d88bf69e4
  filename: cleaned manuscript.pdf
  content_type: application/pdf
  size: 1498944
  md5: 9dffec9c42dd2f5f64912f3fd87b7f9c

## Thumbnail

fileset_id: c2842ad9-6819-46d7-a80d-560d88bf69e4
filename: cleaned manuscript.pdf