説明:
(abstract)Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this letter, we demonstrate the tunability of the charge state of boron vacancies in ultrathin hBN layers, revealing a transition from the optically active singly negatively charged state to the optically inactive doubly negatively charged state when sandwiched between graphene electrodes. Notably, there is a photoluminescence quenching of a few percent upon the application of a bias voltage between the electrodes. Our findings emphasize the critical importance of considering the charge state of optically active defects in 2D materials, while also showing that the negatively charged boron vacancy remains robust against external perpendicular electric fields. This stability makes it a promising candidate for integration into various van der Waals heterostructures.
権利情報:
This document is the Accepted Manuscript version of a Published Article that appeared in final form in Nano Letters, copyright © 2025 American Chemical Society. To access the final published article, see https://doi.org/10.1021/acs.nanolett.5c00654.
キーワード: Hexagonal boron nitride (hBN), Boron vacancy, Van der Waals heterostructures
刊行年月日: 2025-04-09
出版者: American Chemical Society (ACS)
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研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI:
公開URL: https://doi.org/10.1021/acs.nanolett.5c00654
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更新時刻: 2026-06-25 10:52:02 +0900
MDRでの公開時刻: 2026-06-25 18:29:52 +0900
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2025A01049G_arXiv_2501.18206v1.pdf
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