# Switching of K-Q intervalley trions fine structure and their dynamics in n-doped monolayer WS<sub>2</sub>

https://mdr.nims.go.jp/datasets/13dd64d9-9513-4cad-aa65-1d53d834a1ec

## Files

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## Id

13dd64d9-9513-4cad-aa65-1d53d834a1ec

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-18T04:23:00.461337Z

## Updated at

2025-02-23T13:47:39.719670Z

## Published at

2025-02-23T13:47:39.844049Z

## Doi



## First published url

https://doi.org/10.29026/oea.2023.220034

## Date published

2022-10-28

## Recorded date published

2023

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Switching of K-Q intervalley trions fine structure and their dynamics in
    n-doped monolayer WS<sub>2</sub>
  title_type: original
  lang: en

## Description

- description: Monolayer group VI transition metal dichalcogenides (TMDs) have recently
    emerged as promising candidates for photonic and opto-valleytronic applications.
    The optoelectronic properties of these atomically-thin semiconducting crystals
    are strongly governed by the tightly bound electron-hole pairs such as excitons
    and trions (charged excitons). The anomalous spin and valley configurations at
    the conduction band edges in monolayer WS2 give rise to even more fascinating
    valley many-body complexes. Here we find that the indirect Q valley in the first
    Brillouin zone of monolayer WS2 plays a critical role in the formation of a new
    excitonic state, which has not been well studied. By employing a high-quality
    h-BN encapsulated WS2 field-effect transistor, we are able to switch the electron
    concentration within K-Q valleys at conduction band edges. Consequently, a distinct
    emission feature could be excited at the high electron doping region. Such feature
    has a competing population with the K valley trion, and experiences nonlinear
    power-law response and lifetime dynamics under doping. Our findings open up a
    new avenue for the study of valley many-body physics and quantum optics in semiconducting
    2D materials, as well as provide a promising way of valley manipulation for next-generation
    entangled photonic devices.
  description_type: abstract
  lang: und

## Creator

- name: Jiajie Pei
  role: author
- name: Xue Liu
  role: author
- name: Andrés Granados del Águila
  role: author
- name: Di Bao
  role: author
- name: Sheng Liu
  role: author
- name: Mohamed-Raouf Amara
  role: author
- name: Weijie Zhao
  role: author
- name: Feng Zhang
  role: author
- name: Congya You
  role: author
- name: Yongzhe Zhang
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Han Zhang
  role: author
- name: Qihua Xiong
  role: author

## Contact agent



## Publisher

organization: Opto-Electronic Advances

## Managing organization



## Keyword

- subject: Transition metal dichalcogenides
  schema: not_defined
- subject: excitons
  schema: not_defined
- subject: valley many-body complexes
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Opto-Electronic Advances
  issn: '20964579'
  volume: '6'
  issue: '4'
  article_number: '220034'

## Conference



## Related item



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## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



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## Process for specimen treatment



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## Custom property



## Fileset

- id: 9eb36b82-8f38-4c4d-bcd0-368d1b7911fa
  filename: sub-.pdf
  content_type: application/pdf
  size: 1994336
  md5: 1f7ab511fd86848b42a6f6b98f2a7c2c
- id: c94d4db4-a286-42d7-b33a-e20baaa05e18
  filename: OEA-2022-0034-ZhangHan.pdf
  content_type: application/pdf
  size: 3762571
  md5: '04999ffd14ca9401f7b5002d95652e81'

## Thumbnail

fileset_id: c94d4db4-a286-42d7-b33a-e20baaa05e18
filename: OEA-2022-0034-ZhangHan.pdf