# Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures

https://mdr.nims.go.jp/datasets/138c5538-963c-4c17-863f-ec6b26dec02d

## File

- [Ouaj_2025_2D_Mater._12_015017.pdf](https://mdr.nims.go.jp/filesets/9a3b8dd4-5ea8-44c4-87b3-d18bc3192b75/download) ([Detail](https://mdr.nims.go.jp/filesets/9a3b8dd4-5ea8-44c4-87b3-d18bc3192b75.md))

## Id

138c5538-963c-4c17-863f-ec6b26dec02d

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-03T01:49:56.660909Z

## Updated at

2025-02-03T03:30:33.415954Z

## Published at

2025-02-03T03:30:33.713806Z

## Doi



## First published url

https://doi.org/10.1088/2053-1583/ad96c9

## Date published

2025-01-01

## Recorded date published

2025-1-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Benchmarking the integration of hexagonal boron nitride crystals and thin
    films into graphene-based van der Waals heterostructures
  title_type: original
  lang: en

## Description

- description: We present a benchmarking protocol that combines the characterization
    of boron nitride crystals and films with the evaluation of the electronic quality
    of graphene on these substrates. Our study includes hBN crystals grown under different
    conditions (atmospheric pressure high temperature, pressure controlled furnace)
    and scalable BN films deposited by either chemical or physical vapor deposition
    (CVD or PVD). We explore the complete process from boron nitride growth, over
    its optical characterization by time-resolved cathodoluminescence (TRCL), to the
    optical and electronic characterization of graphene by Raman spectroscopy after
    encapsulation and Hall bar processing. Within our benchmarking protocol we achieve
    a homogeneous electronic performance within each Hall bar device through a fast
    and reproducible processing routine. We find that a free exciton lifetime of 1ns
    measured on as-grown hBN crystals by TRCL is sufficient to achieve high graphene
    room temperature charge carrier mobilities of 80, 000 cm2 /(Vs) at a carrier density
    of |n| = 1 × 1012 cm−2 , while re- spective exciton lifetimes around 100ps yield
    mobilities up to 30,000cm2/(Vs). For scalable PVD-grown BN films, we measure carrier
    mobilities exceeding 10,000cm2/(Vs) which correlates with a graphene Raman 2D
    peak linewidth of 22cm−1. Our work highlights the importance of the Raman 2D linewidth
    of graphene as a critical metric that effectively assesses the interface quality
    (i.e. surface roughness) to the BN substrate, which directly affects the charge
    carrier mobility of graphene. Graphene 2D linewidth analysis is suitable for all
    BN substrates and is particularly advantageous when TRCL or Raman spectroscopy
    cannot be applied to specific BN materials such as amorphous or thin films. This
    underlines its superior role in the evaluation of BN crystals and films for the
    use of high-mobility graphene devices.
  description_type: abstract
  lang: und

## Creator

- name: Taoufiq Ouaj
  role: author
  orcid: https://orcid.org/0009-0003-8316-523X
- name: Christophe Arnold
  role: author
  orcid: https://orcid.org/0000-0001-5540-8589
- name: Jon Azpeitia
  role: author
  orcid: https://orcid.org/0000-0003-4542-9735
- name: Sunaja Baltic
  role: author
- name: Julien Barjon
  role: author
  orcid: https://orcid.org/0000-0003-1749-2980
- name: José Cascales
  role: author
  orcid: https://orcid.org/0009-0005-3433-8063
- name: Huanyao Cun
  role: author
  orcid: https://orcid.org/0000-0002-5225-9861
- name: David Esteban
  role: author
  orcid: https://orcid.org/0009-0006-0167-1545
- name: Mar Garcia-Hernandez
  role: author
  orcid: https://orcid.org/0000-0002-5987-0647
- name: Vincent Garnier
  role: author
- name: Subodh K Gautam
  role: author
- name: Thomas Greber
  role: author
  orcid: https://orcid.org/0000-0002-5234-1937
- name: Said Said Hassani
  role: author
- name: Adrian Hemmi
  role: author
- name: Ignacio Jiménez
  role: author
  orcid: https://orcid.org/0000-0001-5605-3185
- name: Catherine Journet
  role: author
  orcid: https://orcid.org/0000-0002-3328-317X
- name: Paul Kögerler
  role: author
  orcid: https://orcid.org/0000-0001-7831-3953
- name: Annick Loiseau
  role: author
  orcid: https://orcid.org/0000-0002-1042-5876
- name: Camille Maestre
  role: author
  orcid: https://orcid.org/0000-0002-7911-3758
- name: Marvin Metzelaars
  role: author
  orcid: https://orcid.org/0000-0002-3529-557X
- name: Philipp Schmidt
  role: author
  orcid: https://orcid.org/0000-0002-1278-1727
- name: Christoph Stampfer
  role: author
  orcid: https://orcid.org/0000-0002-4958-7362
- name: Ingrid Stenger
  role: author
  orcid: https://orcid.org/0000-0002-8917-5776
- name: Philippe Steyer
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
- name: Bérangère Toury
  role: author
  orcid: https://orcid.org/0000-0001-5889-0796
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
- name: Bernd Beschoten
  role: author
  orcid: https://orcid.org/0000-0003-2359-2718

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: Boron nitride
  schema: not_defined
- subject: electronic properties
  schema: not_defined
- subject: graphene
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: 2D Materials
  issn: '20531583'
  volume: '12'
  issue: '1'
  article_number: '015017'

## Conference



## Related item



## Funding

- identifier: '820254'
  funder_name: European Research Council
- identifier: '881603'
  funder_name: Graphene Flagship
- identifier: FK-20-206 114
  funder_name: Universtiy of Zurch
- funder_name: World Premier International Research Center Initiative, MEXT, Japan
- identifier: 2004/1 - 390534769
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: CRSK-2_220582
  funder_name: Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen
    Forschung
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science

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## Fileset

- id: 9a3b8dd4-5ea8-44c4-87b3-d18bc3192b75
  filename: Ouaj_2025_2D_Mater._12_015017.pdf
  content_type: application/pdf
  size: 3311552
  md5: 0bad761993b8d2dae5792eb1bfb40dd5

## Thumbnail

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filename: Ouaj_2025_2D_Mater._12_015017.pdf