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The development of energy-efficient spintronic devices with enhanced magnetoresistance demands materials with low Gilbert damping constant (α) and high half-metallicity. In this study, we report a very low α in sputter-deposited off-stoichiometric Co2FeGa0.5Ge0.5 (CFGG) Heusler alloy thin films and investigate the relation between α and atomic ordering and half-metallicity. CFGG thin films with a composition of Co44.3Fe30.7Ga13.9Ge11.1 were epitaxially deposited on MgO (001) substrates by magnetron sputtering followed by in situ annealing. The density of states calculations revealed that this composition has higher half-metallicity than the stoichiometric composition, owing to Fermi energy tuning. As-deposited and 400 °C-annealed samples exhibited B2-type partially disordered structure, while annealing above 500 °C induced a L21-type ordered structure. The improvement in atomic order resulted in the reduction of α, as demonstrated by ferromagnetic resonance measurement, and enhancement in half-metallicity, as revealed by anisotropic and ordinary magnetoresistance measurements. The 600 °C-annealed samples exhibited an intrinsic α of (3.5 ± 0.3) × 10−4, the low value reported for metallic ferromagnetic materials, demonstrating the potential for its use in energy-efficient spintronic devices.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Spintronics, Heusler alloys, Ferromagnetic resonance,, Gilbert damping, Half-metallicity

刊行年月日: 2025-07-28

出版者: AIP Publishing

掲載誌:

• Journal of Applied Physics (ISSN: 00218979) vol. 138 issue. 4 043904

研究助成金:

• Advanced Storage Research Consortium
• Core Research for Evolutional Science and Technology JPMJCR21O1
• MEXT Initiative to Establish Next-generation Novel Integrated Circuits Centers JPJ011438

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0268776

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更新時刻: 2025-10-28 12:30:08 +0900

MDRでの公開時刻: 2025-10-28 12:16:20 +0900