# Patternable laser-oxidized Ta2O5 dielectric and TaS2 contact for optimizing subthreshold swing of MoS2 field-effect transistors

https://mdr.nims.go.jp/datasets/13202d8e-f720-4746-9850-d505e0feb0f8

## File

- [1-s2.0-S2666523926000267-main.pdf](https://mdr.nims.go.jp/filesets/d8e0a6e8-a0e6-4323-86d3-96f5106c985f/download) ([Detail](https://mdr.nims.go.jp/filesets/d8e0a6e8-a0e6-4323-86d3-96f5106c985f.md))

## Id

13202d8e-f720-4746-9850-d505e0feb0f8

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-03-03T22:49:26.751269Z

## Updated at

2026-03-04T07:30:07.683737Z

## Published at

2026-03-04T03:42:22.288106Z

## Doi



## First published url

https://doi.org/10.1016/j.apsadv.2026.100955

## Date published

2026-02-24

## Recorded date published

2026-3

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Patternable laser-oxidized Ta2O5 dielectric and TaS2 contact for optimizing
    subthreshold swing of MoS2 field-effect transistors
  title_type: original
  lang: en

## Description

- description: Recent progress has achieved a high on-current density and a low contact
    resistivity for n-type field-effect transistors using two-dimensional (2D) semiconductors
    such as MoS2 and WSe2. However, there remain other issues of device parameters,
    such as complementary transistors with a single 2D semiconductor, environmental
    package, and dielectric layers. In particular, the integration of an optimum dielectric
    and ideal interfacial contact for mass production shall play an important role
    in future electronics designs. Here, we demonstrate patternable laser oxidation
    to convert TaS2 into Ta2O5 as an ultra-flat dielectric layer, as evidenced by
    energy-dispersive X-ray spectroscopy, nano-X-ray absorption near edge structure,
    and atomic force microscopy. With this patternable conversion, we also demonstrate
    the implementation of TaS2 as contact electrodes on MoS2 channels. The Ta2O5 layer
    reveals a dielectric constant of 15.98 and a breakdown field of 5.5 MV/cm. A high
    on-current density of ~34.7 is attainable in Bi-contacted devices at a channel
    length of 1.0 μm. Moreover, the TaS2-contacted MoS2 transistors on Ta2O5 present
    an extremely low subthreshold swing of 59.8 mV/dec and a minimal hysteresis of
    0.15 V. This indicates the superior feature of the Ta2O5 dielectric through patternable
    laser oxidation while keeping an ultra-flat interfacial surface.
  description_type: abstract
  lang: und

## Creator

- name: Kuan-Cheng Lu
  role: author
- name: Pen-Yuan Shih
  role: author
- name: Pin-Hsien Lin
  role: author
- name: Shih-Hao Wu
  role: author
- name: Kimitoshi Kono
  role: author
- name: Wen-Bin Jian
  role: author
  orcid: https://orcid.org/0000-0002-1898-9641
- name: Yu-Han Lin
  role: author
- name: Yo-Yao Ho
  role: author
- name: Ching-Hwa Ho
  role: author
  orcid: https://orcid.org/0000-0002-7195-208X
- name: Shin-Yuan Wang
  role: author
- name: Chao-Hsin Chien
  role: author
- name: Ching-Yu Chiang
  role: author
  orcid: https://orcid.org/0000-0002-3640-0474
- name: Shu-Jui Chang
  role: author
- name: Yu-Che Huang
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
- name: Kazuhito Tsukagoshi
  role: author
  orcid: https://orcid.org/0000-0001-9710-2692
- name: Chenming Hu
  role: author
  orcid: https://orcid.org/0000-0003-0836-6296

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: Ta2O5
  schema: not_defined
- subject: TaS2
  schema: not_defined
- subject: subthreshold swing
  schema: not_defined
- subject: MoS2
  schema: not_defined
- subject: field-effect transistors
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Surface Science Advances
  issn: '26665239'
  volume: '32'
  article_number: '100955'

## Conference



## Related item



## Funding

- funder_name: Japan Science and Technology Agency
- funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: NSTC-114-2112-M-A49-008
  funder_name: National Science and Technology Council
- identifier: NSTC 114-2634-F-A49-001
  funder_name: National Science and Technology Council
- identifier: JPMJCR24A5
  funder_name: Core Research for Evolutional Science and Technology
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science
- identifier: 23H02052
  funder_name: Japan Society for the Promotion of Science

## Instrument



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## Fileset

- id: d8e0a6e8-a0e6-4323-86d3-96f5106c985f
  filename: 1-s2.0-S2666523926000267-main.pdf
  content_type: application/pdf
  size: 5024326
  md5: e296d0ba4ba98a4e0e2f45ddc3da2b8d

## Thumbnail

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