Infrared photoresistance as a sensitive probe of electronic transport in twisted bilayer graphene

S Hubmann; G Di Battista; I A Dmitriev; K Watanabe; T Taniguchi; D K Efetov; S D Ganichev

doi:10.1088/2053-1583/ac9b70

論文 Infrared photoresistance as a sensitive probe of electronic transport in twisted bilayer graphene

S Hubmann ; G Di Battista ; I A Dmitriev ; K Watanabe (National Institute for Materials Science) ; T Taniguchi (National Institute for Materials Science) ; D K Efetov ; S D Ganichev

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S Hubmann, G Di Battista, I A Dmitriev, K Watanabe, T Taniguchi, D K Efetov, S D Ganichev. Infrared photoresistance as a sensitive probe of electronic transport in twisted bilayer graphene. 2D Materials. 2023, 10 (1), 015005. https://doi.org/10.1088/2053-1583/ac9b70

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(abstract)

We report on observation of the far-infrared photoresistance of twisted bilayer graphene (tBLG) under continuous quantum cascade laser illumination at a frequency of 57.1 THz. The photoresis- tance shows an intricate sign-alternating behavior under variations of temperature and back gate voltage, and exhibits giant resonance-like enhancements at certain gate voltages. The structure of the photoresponse correlates with weaker features in the dark dc resistance reflecting the complex band structure of tBLG. It is shown that the observed photoresistance is well captured by a bolomet- ric model describing the electron and hole gas heating, which implies an ultrafast thermalization of the photoexcited electron-hole pairs in the whole range of studied temperatures and back gate volt- ages. We thus establish that photoresistance can serve a highly sensitive probe of the temperature variations of electronic transport in tBLG.

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