# Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides

https://mdr.nims.go.jp/datasets/11fb6d62-06c9-4ec0-8dcb-37d520c22a6c

## File

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## Id

11fb6d62-06c9-4ec0-8dcb-37d520c22a6c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-20T02:32:34.000645Z

## Updated at

2025-02-23T13:49:52.289785Z

## Published at

2025-02-23T13:49:52.385727Z

## Doi



## First published url

https://doi.org/10.1038/s41467-019-11751-3

## Date published

2019-08-23

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting
    monolayer transition metal dichalcogenides
  title_type: original
  lang: en

## Description

- description: Assessing atomic defect states and their ramifications on the electronic
    properties of two- dimensional van der Waals semiconducting transition metal dichalcogenides
    (SC-TMDs) is the primary task to expedite multi-disciplinary efforts in the promotion
    of next-generation electrical and optical device applications utilizing these
    low-dimensional materials. Here, with electron tunneling and optical spectroscopy
    measurements with density functional theory, we spectroscopically locate the mid-gap
    states from chalcogen-atom vacancies in four representative monolayer SC-TMDs—WS2,
    MoS2, WSe2, and MoSe2—, and carefully analyze the similarities and dissimilarities
    of the atomic defects in four distinctive materials regarding the physical origins
    of the missing chalcogen atoms and the implications to SC-mTMD properties. In
    addition, we address both quasiparticle and optical energy gaps of the SC-mTMD
    films and find out many-body interactions significantly enlarge the quasiparticle
    energy gaps and excitonic binding energies, when the semiconducting monolayers
    are encapsulated by non-interacting hexagonal boron nitride layers.
  description_type: abstract
  lang: und

## Creator

- name: Tae Young Jeong
  role: author
- name: Hakseong Kim
  role: author
- name: Sang-Jun Choi
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Ki Ju Yee
  role: author
- name: Yong-Sung Kim
  role: author
- name: Suyong Jung
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Atomic defect states
  schema: not_defined
- subject: transition metal dichalcogenides
  schema: not_defined
- subject: electron tunneling
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Nature Communications
  issn: '20411723'
  volume: '10'
  issue: '1'
  article_number: '3825'

## Conference



## Related item



## Funding

- identifier: KRISS-2018-GP2018-0019
  funder_name: Korea Research Institute of Standards and Science
- identifier: NRF-2016R1A2B4008816
  funder_name: National Research Foundation of Korea
- identifier: NRF-2019R1A2C2004007
  funder_name: National Research Foundation of Korea

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## Fileset

- id: ec6474c5-667c-4af8-80d5-6c675720c0c7
  filename: s41467-019-11751-3.pdf
  content_type: application/pdf
  size: 1619051
  md5: f9a1f40fdf4a7ba393c7e418741027b4

## Thumbnail

fileset_id: ec6474c5-667c-4af8-80d5-6c675720c0c7
filename: s41467-019-11751-3.pdf