# Increasing SiGe crystal growth rate utilizing microgravity

https://mdr.nims.go.jp/datasets/11ec83ac-02be-4ad4-a943-dbcda98291dc

## File

- [1-s2.0-S258915292600061X-main.pdf](https://mdr.nims.go.jp/filesets/77a2380a-3de0-4cbe-a158-65d8b3c244e3/download) ([Detail](https://mdr.nims.go.jp/filesets/77a2380a-3de0-4cbe-a158-65d8b3c244e3.md))

## Id

11ec83ac-02be-4ad4-a943-dbcda98291dc

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-03-17T05:43:36.988705Z

## Updated at

2026-03-18T03:30:13.485507Z

## Published at

2026-03-18T00:50:26.636105Z

## Doi



## First published url

https://doi.org/10.1016/j.mtla.2026.102709

## Date published

2026-03-08

## Recorded date published

2026-5

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Increasing SiGe crystal growth rate utilizing microgravity
  title_type: original
  lang: en

## Description

- description: An unanticipated rapid increase in the initial growth rate has been
    reported in solid-solution semiconductor crystal growth experiments aboard the
    International Space Station (ISS). This study reports the growth rate of a Si52Ge48
    solid-solution crystal grown on the ISS using the Traveling Liquidus Zone (TLZ)
    method, with a diameter of 20 mm and a growth length of 18.8 mm at the center
    axis. The average growth rate was 0.125 mm/h over a 150 h growth period. The growth
    interface during growth was identified by artificial striations induced by the
    temperature-step method. In the initial transient region, with a growth length
    of 1.5 mm, the solid/liquid interface transitioned from a planar to a facet array,
    and after the facets disappeared, the interface reverted to planar. These planar
    growth rates were faster than the average growth rate of 0.125 mm/h. Further,
    the facet growth rate was calculated. Tiller's criteria indicated that constitutional
    supercooling had occurred in the initial transient growth region. The unanticipated
    rapid increase in growth rate in our experiment was attributed to constitutional
    supercooling induced by the convectionless condition rather than to the Soret
    effect.
  description_type: abstract
  lang: und

## Creator

- name: Yasutomo Arai
  role: author
  orcid: https://orcid.org/0000-0002-0082-9383
- name: Kyoichi Kinoshita
  role: author
  orcid: https://orcid.org/0000-0002-2066-4600
- name: Toshinori Taishi
  role: author
- name: Yusuke Matsuoka
  role: author
  orcid: https://orcid.org/0000-0001-5300-1726
- name: Taichi Abe
  role: author
  orcid: https://orcid.org/0000-0002-5065-0939
- name: Takao Tsukada
  role: author
- name: Masaki Kubo
  role: author

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: Silicon germanium alloy
  schema: not_defined
- subject: Crystal growth
  schema: not_defined
- subject: Solid/liquid interface
  schema: not_defined
- subject: Microsegregation
  schema: not_defined
- subject: Soret effect
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Materialia
  issn: '25891529'
  volume: '46'
  article_number: '102709'

## Conference



## Related item



## Funding

- funder_name: National Institute for Materials Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

- id: 77a2380a-3de0-4cbe-a158-65d8b3c244e3
  filename: 1-s2.0-S258915292600061X-main.pdf
  content_type: application/pdf
  size: 10838121
  md5: 20f7b8c0a97b654a0d02d36c99ffad04

## Thumbnail

fileset_id: 77a2380a-3de0-4cbe-a158-65d8b3c244e3
filename: 1-s2.0-S258915292600061X-main.pdf