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An unanticipated rapid increase in the initial growth rate has been reported in solid-solution semiconductor crystal growth experiments aboard the International Space Station (ISS). This study reports the growth rate of a Si52Ge48 solid-solution crystal grown on the ISS using the Traveling Liquidus Zone (TLZ) method, with a diameter of 20 mm and a growth length of 18.8 mm at the center axis. The average growth rate was 0.125 mm/h over a 150 h growth period. The growth interface during growth was identified by artificial striations induced by the temperature-step method. In the initial transient region, with a growth length of 1.5 mm, the solid/liquid interface transitioned from a planar to a facet array, and after the facets disappeared, the interface reverted to planar. These planar growth rates were faster than the average growth rate of 0.125 mm/h. Further, the facet growth rate was calculated. Tiller's criteria indicated that constitutional supercooling had occurred in the initial transient growth region. The unanticipated rapid increase in growth rate in our experiment was attributed to constitutional supercooling induced by the convectionless condition rather than to the Soret effect.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Silicon germanium alloy, Crystal growth, Solid/liquid interface, Microsegregation, Soret effect

刊行年月日: 2026-03-08

出版者: Elsevier BV

掲載誌:

• Materialia (ISSN: 25891529) vol. 46 102709

研究助成金:

• National Institute for Materials Science

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1016/j.mtla.2026.102709

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更新時刻: 2026-03-18 12:30:13 +0900

MDRでの公開時刻: 2026-03-18 09:50:26 +0900