# Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High‐Temperature‐Resistant Single‐Crystal Aluminum Nitride (0001)

https://mdr.nims.go.jp/datasets/1194ce42-f7ca-4414-9ab3-087a037e368b

## File

- [Advanced Science - 2025 - Yang - Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on.pdf](https://mdr.nims.go.jp/filesets/c376af6c-10c7-45ff-b4e5-11fe56559bcb/download) ([Detail](https://mdr.nims.go.jp/filesets/c376af6c-10c7-45ff-b4e5-11fe56559bcb.md))

## Id

1194ce42-f7ca-4414-9ab3-087a037e368b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-12-14T22:26:16.103689Z

## Updated at

2025-12-15T04:40:58.715000Z

## Published at

2025-12-18T10:08:21.744163Z

## Doi



## First published url

https://doi.org/10.1002/advs.202509354

## Date published

2025-09-29

## Recorded date published

2025-12

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High‐Temperature‐Resistant
    Single‐Crystal Aluminum Nitride (0001)
  title_type: original
  lang: en

## Description

- description: The epitaxy of high-quality hexagonal boron nitride (hBN) multilayers
    on dielectric wafers is essential for hBN applications but remains challenging.
    Herein, highly-oriented hBN multilayers grown on single-crystal aluminum nitride
    (AlN)—AlN on sapphire and bulk AlN substrates—via metalorganic vapor phase epitaxy
    and high-temperature annealing is reported. Hexagonal AlN (0001) not only provides
    a crystallographically commensurate base for hBN epitaxy but is thermally stable
    for hBN annealing up to 1800°C, enabling the first instance of large-area multilayer
    hBN with both superior out-of-plane and in-plane alignments grown directly on
    dielectrics using a fully industry-compatible approach. Elevated temperatures
    also reduce carbon and allow control over the separation of related single photon
    emission centers in hBN. These centers exhibited a record-narrow wavelength distribution
    (578 ± 5 nm) with small zero-phonon linewidths down to 1.44 meV, indicating the
    high uniformity of the achieved multilayer hBN films. This work paves an industry-compatible
    way towards producing highly-oriented homogeneous hBN multilayers on dielectrics,
    promising for future device and integration applications.
  description_type: abstract
  lang: und

## Creator

- name: Xu Yang
  role: author
  orcid: https://orcid.org/0000-0001-8195-5850
  organization: National Institute for Materials Science
- name: Markus Pristovsek
  role: author
- name: Shugo Nitta
  role: author
- name: Yoshio Honda
  role: author
- name: Akihiro Ohtake
  role: author
  orcid: https://orcid.org/0000-0002-3519-4613
  organization: National Institute for Materials Science
- name: Yoshiki Sakuma
  role: author
  orcid: https://orcid.org/0000-0001-6804-7217
  organization: National Institute for Materials Science
- name: Takanobu Hiroto
  role: author
  orcid: https://orcid.org/0000-0002-6176-5782
  organization: National Institute for Materials Science
- name: Takayuki Ishida
  role: author
- name: Michio Ikezawa
  role: author
- name: Qixin Guo
  role: author
- name: Hiroshi Amano
  role: author

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: Epitaxial BN layers
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/
  date_licensed: 2025-09-29

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Science
  issn: '21983844'
  volume: '12'
  issue: '46'
  article_number: e09354

## Conference



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## Instrument



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## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



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## Fileset

- id: c376af6c-10c7-45ff-b4e5-11fe56559bcb
  filename: Advanced Science - 2025 - Yang - Highly Oriented Epitaxial Hexagonal Boron
    Nitride Multilayers on.pdf
  content_type: application/pdf
  size: 2944553
  md5: 500d3455dcfd330b0ef6aff304a25f34

## Thumbnail

fileset_id: c376af6c-10c7-45ff-b4e5-11fe56559bcb
filename: Advanced Science - 2025 - Yang - Highly Oriented Epitaxial Hexagonal Boron
  Nitride Multilayers on.pdf