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Description:

Transition metal dichalcogenides (TMDs) have been attracted increasingly attention in fundamental studies and technological applications owing to their atomically thin thickness, expanded interlayer distance, motif bandgap, and phase transition ability. Even though TMDs own a wide variety of material assets from semiconductor to semimetallic to metallic, the materials with fixed features may not show excellence for precise application. As a result of exclusive crystalline polymorphs, physical and chemical assets of TMDs can be efficiently modified via various approaches of interface nanoarchitectonics, including heteroatom doping, heterostructure, phase engineering, reducing size, alloying, and hybridization. With the modifying properties, TMDs become interesting materials in diverse fields, including catalysis, energy, electronics, transistors, and optoelectronics.

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• In Copyright
  This document is the Accepted Manuscript version of a Published Work that appeared in final form in Langmuir, copyright © 2023 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.langmuir.3c02929

Keyword: Nanoarchitectonics, Transition-metal dichalcogenides

Date published: 2023-12-19

Publisher: American Chemical Society (ACS)

Journal:

• LANGMUIR (ISSN: 07437463) vol. 39 issue. 50 p. 18175-18186

Funding:

• JSPS JP22F22368 (熱で充電できるスーパーキャパシタ：セルフパワーエネルギー貯蔵デバイス)

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4354

First published URL: https://doi.org/10.1021/acs.langmuir.3c02929

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Updated at: 2024-12-04 14:53:12 +0900

Published on MDR: 2024-12-04 14:53:12 +0900