F. Cadiz
;
E. Courtade
;
C. Robert
;
G. Wang
;
Y. Shen
;
H. Cai
;
T. Taniguchi
(National Institute for Materials Science
)
;
K. Watanabe
(National Institute for Materials Science
)
;
H. Carrere
;
D. Lagarde
;
M. Manca
;
T. Amand
;
P. Renucci
;
S. Tongay
;
X. Marie
;
B. Urbaszek
説明:
(abstract)The strong light-matter interaction and the valley selective optical selection rules make monolayer (ML) MoS2 an exciting 2D material for fundamental physics and optoelectronics applications. But, so far, optical transition linewidths even at low temperature are typically as large as a few tens of meV and contain homogeneous and inhomogeneous contributions. This prevented in-depth studies, in contrast to the better- characterized ML materials MoSe2 and WSe2. In this work, we show that encapsulation of ML MoS2 in hexagonal boron nitride can efficiently suppress the inhomogeneous contribution to the exciton linewidth, as we measure in photoluminescence and reflectivity a FWHM down to 2 meV at T 1⁄4 4 K. Narrow optical transition linewidths are also observed in encapsulated WS2, WSe2, and MoSe2 MLs. This indicates that surface protection and substrate flatness are key ingredients for obtaining stable, high-quality samples. Among the new possibilities offered by the well-defined optical transitions, we measure the homogeneous broadening induced by the interaction with phonons in temperature-dependent experiments. We uncover new information on spin and valley physics and present the rotation of valley coherence in applied magnetic fields perpendicular to the ML.
権利情報:
キーワード: Monolayer, molybdenum disulfide, optical properties
刊行年月日: 2017-05-18
出版者: American Physical Society (APS)
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1103/physrevx.7.021026
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-02-28 16:30:37 +0900
MDRでの公開時刻: 2025-02-28 16:30:37 +0900
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PhysRevX.7.021026.pdf
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サイズ | 4.65MB | 詳細 |